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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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ISC1862 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISC1862 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademar 1 isc Silicon NPN RF Transistor ISC1862 DESCRIPTION · Collector Current :IC= 100mA · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 12V(Min) · High gain: ︱ S21e ︱ 2 = 11 dB (typical) ( IC=20mA,f=1GHz) · Gain bandwidth product: fT = 7 GHZ (typical) (IC=20mA) APPLICATIONS · Designed for VHF, UHF and CATV high frequency wideband low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
Numéro de pièce similaire - ISC1862 |
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Description similaire - ISC1862 |
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