MMRF2004NB datasheet(4/19 Pages) NXP

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RF Device Data

Freescale Semiconductor, Inc.

MMRF2004NBR1

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 =77 mA, IDQ2 = 275 mA, 2500--2700 MHz Bandwidth

Pout @ 1 dB Compression Point, CW

P1dB

—

IMD Symmetry @ 27 W PEP, Pout where IMD Third Order

Intermodulation  30 dBc

(Delta IMD Third Order Intermodulation between Upper and Lower

Sidebands > 2 dB)

IMDsym

—

MHz

VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

MHz

Gain Flatness in 200 MHz Bandwidth @ Pout =4 W Avg.

—

0.5

—

Average Deviation from Linear Phase in 200 MHz Bandwidth

@Pout =25 W CW



—

2.1

—



Average Group Delay @ Pout = 25 W CW, f = 2600 MHz

Delay

—

2.3

—

Part--to--Part Insertion Phase Variation @ Pout =25 W CW,

f = 2600 MHz, Six Sigma Window



—



Gain Variation over Temperature

(--30Cto+85C)

G

—

0.036

—

dB/C

Output Power Variation over Temperature

(--30Cto+85C)

P1dB

—

0.003

—

dBm/C

Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ1 =77 mA, IDQ2 = 275 mA, Pout =26 dBm Avg.,

f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability

on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.

Power Gain

Gps

—

27.8

—

Power Added Efficiency

PAE

—

3.2

—

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF

PAR

—

Adjacent Channel Power Ratio

ACPR

—

--56

—

dBc

Input Return Loss

IRL

—

--13

—

Relative Constellation Error @ Pout =1.25 W Avg. (1)

RCE

—

--40

—

1. RCE = 20Log(EVM/100)

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