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TC7SAU04FU Fiches technique(PDF) 4 Page - Toshiba Semiconductor |
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TC7SAU04FU Fiches technique(HTML) 4 Page - Toshiba Semiconductor |
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4 / 8 page ![]() TC7SAU04F/FU 2002-12-13 4 AC Characteristics (Ta ==== ----40~85°C, input: tr ==== tf ==== 2.0 ns, CL ==== 30 pF, RL ==== 500 W W W W) Characteristics Symbol Test Condition VCC (V) Min Max Unit 1.8 1.0 8.4 2.5 ± 0.2 0.8 4.2 Propagation delay time tpLH tpHL Figure 1, Figure 2 3.3 ± 0.3 0.6 3.5 ns For CL = 50 pF, add approximately 300 ps to the AC maximum specification. Dynamic Switching Characteristics (Ta ==== 25°C, input: tr ==== tf ==== 2.0 ns, CL ==== 30 pF) Characteristics Symbol Test Condition VCC (V) Typ. Unit VIN = 1.8 V, VIL = 0 V (Note 9) 1.8 0.25 VIN = 2.5 V, VIL = 0 V (Note 9) 2.5 0.6 Quiet output maximum dynamic VOL VOLP VIN = 3.3 V, VIL = 0 V (Note 9) 3.3 0.8 ns VIN = 1.8 V, VIL = 0 V (Note 9) 1.8 -0.25 VIN = 2.5 V, VIL = 0 V (Note 9) 2.5 -0.6 Quiet output minimum dynamic VOL VOLV VIN = 3.3 V, VIL = 0 V (Note 9) 3.3 -0.8 ns VIN = 1.8 V, VIL = 0 V (Note 9) 1.8 1.5 VIN = 2.5 V, VIL = 0 V (Note 9) 2.5 1.9 Quiet output minimum dynamic VOH VOLP VIN = 3.3 V, VIL = 0 V (Note 9) 3.3 2.2 ns Note 9: Parameter guaranteed by design. Capacitive Characteristics (Ta ==== 25°C) Characteristics Symbol Test Condition VCC (V) Typ. Unit Input capacitance CIN ¾ 1.8, 2.5, 3.3 4 pF Power dissipation capacitance CPD fIN = 10 MHz (Note 10) 1.8, 2.5, 3.3 7 pF Note 10: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC (opr.) = CPD・VCC・fIN + ICC |
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