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PCFMB150W12 Fiches technique(PDF) 4 Page - Kyocera Kinseki Corpotation

No de pièce PCFMB150W12
Description  IGBT Module
PDF  4 Pages
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Fabricant  KSS [Kyocera Kinseki Corpotation]
Site Internet  http://www.kinseki.co.jp/eng
Logo KSS - Kyocera Kinseki Corpotation

PCFMB150W12 Fiches technique(HTML) 4 Page - Kyocera Kinseki Corpotation

  PCFMB150W12 Datasheet HTML 1Page - Kyocera Kinseki Corpotation PCFMB150W12 Datasheet HTML 2Page - Kyocera Kinseki Corpotation PCFMB150W12 Datasheet HTML 3Page - Kyocera Kinseki Corpotation PCFMB150W12 Datasheet HTML 4Page - Kyocera Kinseki Corpotation  
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Module
0
25
50
75
100
125
150
0
10
20
30
40
50
Collector Current IC (A)
Fig.7- Collector Current vs. Switching Loss
EOFF
EON
VCC=600V
RG=5.1
VGE=±15V
Tj=125°C
Tj=150°C
Inductive Load
ERR
3
10
30
100
1
3
10
30
100
300
1000
Series Gate Impedance RG (
)
Fig.8- Series Gate Impedance vs. Switching Loss
EOFF
EON
VCC=600V
IC=150A
VGE=±15V
Tj=125°C
Tj=150°C
Inductive Load
ERR
0
25
50
75
100
125
150
10
30
100
300
1000
Forward Current IF (A)
Fig.10- Reverse Recovery Characteristics
of FWD & Inverse Diode (Typical)
IRrM
trr
VCC=600V, VGE=±15V, RG=5.1
Tj=125°C
Tj=150°C
0
200
400
600
800
1000
1200
1400
1600
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
Collector to Emitter Voltage V CE (V)
Fig.11- Reverse Bias Safe Operating Area
RG=5.1
, VGE=±15V, Tj<150°C (Chip level)
0
1
2
3
4
0
50
100
150
200
250
300
Forward Voltage V F (V)
Fig.9- Forward Characteristics of FWD (Typical)
Tj=25°C
Tj=125°C
Tj=150°C
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
1
1x10 -3
3x10 -3
1x10 -2
3x10 -2
1x10 -1
3x10 -1
1
3
Time t (s)
Fig.12- Transient Thermal Impedance
TC=25°C
1 Sh ot Pul s e
FWD
IGBT



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