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PRFMB50W12 Fiches technique(PDF) 4 Page - Kyocera Kinseki Corpotation

No de pièce PRFMB50W12
Description  IGBT Module
PDF  4 Pages
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Fabricant  KSS [Kyocera Kinseki Corpotation]
Site Internet  http://www.kinseki.co.jp/eng
Logo KSS - Kyocera Kinseki Corpotation

PRFMB50W12 Fiches technique(HTML) 4 Page - Kyocera Kinseki Corpotation

  PRFMB50W12 Datasheet HTML 1Page - Kyocera Kinseki Corpotation PRFMB50W12 Datasheet HTML 2Page - Kyocera Kinseki Corpotation PRFMB50W12 Datasheet HTML 3Page - Kyocera Kinseki Corpotation PRFMB50W12 Datasheet HTML 4Page - Kyocera Kinseki Corpotation  
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background image
Module
0
10
20
30
40
50
0
2
4
6
8
Collector Current IC (A)
Fig.7- Collector Current vs. Switching Loss
EOFF
EON
VCC=600V
RG=15
VGE=±15V
Tj=125°C
Tj=150°C
Inductive Load
ERR
10
30
100
300
0.1
0.3
1
3
10
30
100
Series Gate Impedance RG (
)
Fig.8- Series Gate Impedance vs. Switching Loss
EOFF
EON
VCC=600V
IC=50A
VGE=±15V
Tj=125°C
Tj=150°C
Inductive Load
ERR
0
10
20
30
40
50
2
5
10
20
50
100
200
500
1000
Forward Current IF (A)
Fig.10- Reverse Recovery Characteristics
of FWD & Inverse Diode (Typical)
IRrM
trr
VCC=600V, VGE=±15V, RG=15
Tj=125°C
Tj=150°C
0
200
400
600
800
1000
1200
1400
1600
0.1
0.2
0.5
1
2
5
10
20
50
100
200
Collector to Emitter Voltage V CE (V)
Fig.11- Reverse Bias Safe Operating Area
RG=15
, VGE=±15V, Tj<150°C (Chip level)
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
1
1x10
-2
3x10
-2
1x10
-1
3x10
-1
1
3
Time t (s)
Fig.12- Transient Thermal Impedance
TC=25°C
1 Shot Pulse
FWD & Inverse Diode
IGBT
0
1
2
3
4
0
20
40
60
80
100
Forward Voltage V F (V)
Fig.9 - Forward Characteristics of FWD (Typical)
Tj=25°C
Tj=125°C
Tj=150°C



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