MMRF1312GS datasheet(4/15 Pages) NXP

4 / 15 page

RF Device Data

Freescale Semiconductor, Inc.

MMRF1312H MMRF1312HS MMRF1312GS

TYPICAL CHARACTERISTICS

020

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain--Source Voltage

Crss

Measured with 30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

Note: Each side of device measured separately.

100

IDQ(A+B) = 100 mA

Figure 3. Normalized VGS versus Quiescent

Current and Case Temperature

TC, CASE TEMPERATURE (C)

1.08

1.04

1.02

0.98

0.96

100

–50

–25

500 mA

1500 mA

VDD =50 Vdc

100

–2.36

IDQ (mA)

Slope (mV/C)

500

–2.26

1500

–1.84

0.92

0.94

1.06

250

109

TJ, JUNCTION TEMPERATURE (C)

Figure 4. MTTF versus Junction Temperature — Pulse

Note:

MTTF value represents the total cumulative operating time

under indicated test conditions.

107

106

105

110

130

150

170

190

210

230

108

ID = 26.74 Amps

34.04 Amps

39.03 Amps

VDD =50 Vdc

Pulse Width = 128 sec

10% Duty Cycle

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