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MMRF1306H Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce MMRF1306H
Description  RF Power LDMOS Transistors
PDF  14 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1306H Fiches technique(HTML) 3 Page - NXP Semiconductors

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MMRF1306HR5 MMRF1306HSR5
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.),
f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
Gps
23.0
24.0
26.0
dB
Drain Efficiency
D
72.5
74.0
—
%
Input Return Loss
IRL
—
--14
--10
dB
Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA
Frequency
(MHz)
Signal Type
VSWR
Pout
(W)
Test Voltage, VDD
Result
230
Pulse
(100 sec, 20% Duty Cycle)
>65:1 at all
Phase Angles
1500 Peak
(3 dB Overdrive)
50
No Device Degradation



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