FT28HC256

Characteristics subject to change without notice.

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REV 1.0

CE Controlled Write Cycle

Page Write Cycle

Notes:

(9) Between successive byte writes within a page wr ite operation, OE can be strobed LO W: e.g. this can be done with CE and WE

HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively per-

forming a polling operation.

(10)The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to

either the CE or WE controlled write cycle timing.

Address

CE

WE

OE

Data In

Data Out

HIGH Z

Data Valid

WE

Last Byte

Byte 0

Byte 1

Byte 2

Byte n

Byte n+1

Byte n+2

CE

I/O

writes to an unknown address could occur.