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FAM65V05DF1 Fiches technique(PDF) 7 Page - ON Semiconductor |
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FAM65V05DF1 Fiches technique(HTML) 7 Page - ON Semiconductor |
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7 / 19 page ![]() © 2016 Semiconductor Component Industries, LLC www.onsemi.com FAM65V05DF1 Rev. 1.0 www.fairchildsemi.com 6 Electrical Specifications Inverter part (TJ as specified) Symbol Parameters Conditions Min Typ Max Unit VCE(SAT) Collector-Emitter Saturation Voltage VCC = VBS = 15 V, VIN = 5 V IC = 50 A, TJ = 25°C - 1.65 - V VCC = VBS = 15 V, VIN = 5 V IC = 50 A, TJ = 125°C - 1.9 2.4 V VF FWD Forward Voltage VIN = 0 V, IF = 30 A, TJ = 25°C - 2.1 - V VIN = 0 V, IF = 30 A, TJ = 125°C 1.9 2.5 V HS tON High Side Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 50 A VIN = 0 V ↔ 5V, Ls=55 nH, Inductive Load TJ= 25°C (4 , 5) - 0.73 - μs tC(ON) - 0.12 - tOFF - 0.80 - tC(OFF) - 0.14 - trr - 0.10 - tON High Side Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 50 A VIN = 0 V ↔ 5V, Ls=55 nH, Inductive Load TJ= 125°C (4, 5) - 0.70 - μs tC(ON) - 0.15 - tOFF - 0.87 - tC(OFF) - 0.19 - trr - 0.20 - LS tON Low Side Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 50 A VIN = 0 V ↔ 5 V, Ls=55 nH, Inductive Load TJ= 25°C (4, 5) - 0.68 - μs tC(ON) - 0.20 - tOFF - 0.86 - tC(OFF) - 0.19 - trr - 0.14 - tON Low Side Switching Times VPN = 300 V, VCC = VBS = 15 V IC = 50 A VIN = 0 V ↔ 5 V, Ls=55 nH, Inductive Load TJ= 125°C (4,5) - 0.64 - μs tC(ON) - 0.24 - tOFF - 0.88 - tC(OFF) - 0.23 - trr - 0.20 - SCWT Short Circuit withstand time (6) VCC = VBS = 15 V, VPN= 450 V, TJ= 25°C, Non-repetitive - 5 - μs ICES Collector-Emitter Leakage Current for IGBT and diode in parallel TJ= 25°C, VCE = 650 V - 3 - μA TJ= 125°C, VCE = 650 V - 150 1500 μA Notes: 4. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching times of IGBT itself under the given gate driving condition internally. Refer to Figure 6 for detailed information 5. Stray inductance Ls is sum of stray inductance of module & setup 6. Verified by design and bench-testing only |
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