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KOM-2125 Fiches technique(PDF) 2 Page - OSRAM GmbH

No de pièce KOM-2125
Description  Suitable for applications from 400 nm to 1100 nm
PDF  11 Pages
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Fabricant  OSRAM [OSRAM GmbH]
Site Internet  http://www.osram.com
Logo OSRAM - OSRAM GmbH

KOM-2125 Fiches technique(HTML) 2 Page - OSRAM GmbH

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2016-04-11
2
Version 1.4
KOM 2125
Maximum Ratings (TA = 25 °C)
Characteristics (T
A = 25 °C)
Parameter
Symbol
Values
Unit
Operating and storage temperature range
T
op; Tstg
-40 ... 80
°C
Reverse voltage
V
R
60
V
Total Power dissipation
P
tot
150
mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
V
ESD
2000
V
Parameter
Symbol
Values
Unit
Photocurrent
(Ev = 1000 lx, Std. Light A, VR = 5 V; Diode A)
(typ (min))
IP
40 (≥ 30)
µA
Photocurrent
(V
R = 5 V, Ee = 1 mW/cm
2 , λ = 870 nm, Diode B)
(typ (min))
IP
100 (≥ 75)
μA
Wavelength of max. sensitivity
(typ)
λ
S max
850
nm
Spectral range of sensitivity
(typ)
λ
10%
(typ) 400
... 1100
nm
Radiant sensitive area
(Diode A)
(typ)
A
4.00
mm
2
Radiant sensitive area
(Diode B)
(typ)
A
10.00
mm
2
Dimensions of radiant sensitive area
(Diode A)
(typ)
L x W
2 x 2
mm x
mm
Dimensions of radiant sensitive area
(Diode B)
(typ)
L x W
2 x 5
mm x
mm
Half angle
(typ)
ϕ
± 60
°
Dark current
(VR = 10 V; Diode A)
(typ (max)) IR
5 (≤ 30)
nA
Dark current
(V
R = 10 V; Diode B)
(typ (max)) IR
10 (≤ 30)
nA
Spectral sensitivity of the chip
(λ = 870 nm)
(typ)
S
λ typ
0.62
A / W
Quantum yield of the chip
(λ = 870 nm)
(typ)
η
0.88
Electro
ns
/Photon
Open-circuit voltage
(Ev = 1000 lx, Std. Light A)
(typ (min))
VO
350 (≥ 300)
mV
Short-circuit current
(E
v = 1000 lx, Std. Light A; Diode A)
(typ)
I
SC
38
µA



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