BP-104-FS datasheet(2/13 Pages) OSRAM

2 / 13 page

2016-03-30

Version 1.4

BP 104 FS

Maximum Ratings (TA = 25 °C)

Characteristics (T

A = 25 °C)

Parameter

Symbol

Values

Unit

Operating and storage temperature range

op; Tstg

-40 ... 100

°C

Reverse voltage

Total Power dissipation

tot

150

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

ESD

2000

Parameter

Symbol

Values

Unit

Photocurrent

(VR = 5 V, Ee = 1 mW/cm

2, λ = 950 nm)

(typ (min))

34 (≥ 25)

µA

Wavelength of max. sensitivity

(typ)

λS max

950

Spectral range of sensitivity

(typ)

λ10%

(typ) 800

... 1100

Radiant sensitive area

(typ)

4.84

mm2

Dimensions of radiant sensitive area

(typ)

L x W

2.2 x 2.2

mm x

Half angle

(typ)

± 60

Dark current

(VR = 10 V)

(typ (max)) IR

2 (≤ 30)

Spectral sensitivity of the chip

(λ = 950 nm)

(typ)

Sλ typ

0.7

A / W

Quantum yield of the chip

(λ = 950 nm)

(typ)

0.91

Electro

/Photon

Open-circuit voltage

(Ee = 0.5 mW/cm

2, λ = 950 nm)

(typ (min))

330 (≥ 250)

Short-circuit current

e = 0.5 mW/cm

2, λ = 950 nm)

(typ)

ISC

µA

Rise and fall time

R = 5 V, RL = 50 Ω, λ = 850 nm)

(typ)

r, tf

0.02

µs

Forward voltage

(IF = 100mA, Ee = 0)

(typ)

1.3

Capacitance

(VR = 0 V, f = 1 MHz, E = 0)

(typ)

Temperature coefficient of VO

(typ)

TCV

-2.6

mV / K

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