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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SD103CWS Fiches technique(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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SD103CWS Fiches technique(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page  Production specification Schottky Barrier Diode SD103AWS/SD103BWS/SD103CWS B025 www.gmesemi.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage SD103AWS SD103BWS SD103CWS V(BR)R 40 30 20 - - V IR=10 μA IR=10 μA IR=10 μA Forward voltage VF - - 0.37 0.60 V IF=20mA IF=200mA Reverse current SD103AWS SD103BWS SD103CWS IRM - - 5.0 μA VR=30V VR=20V VR=10V Junction Capacitance CJ - - 50 pF VR=0,f=1MHz Reverse Recovery Time trr - 10 - ns IR=IF=200mA Irr=0.1*IR,RL=100 Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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