LP6482S datasheet(4/10 Pages) POWER

4 / 10 page

LP6482S-02

May.-2013

Email: marketing@lowpowersemi.com

www.lowpowersemi.com

Page 4 of 10

Preliminary Datasheet

LP6482S

Absolute Maximum Ratings

Note 1



Input Voltage to GND --------------------------------------------------------------------------------------------------------- 36V



SW\BS to GND (VSW) ------------------------------------------------------------------------------------ -0.3V to VIN +0.3V



FB to GND (VFB) ---------------------------------------------------------------------------------------------------- -0.3V to 6V



EN to GND (VEN) ---------------------------------------------------------------------------------------------------- -0.3V to 6V



COMP\SS to GND (VEN) ------------------------------------------------------------------------------------------ -0.3V to 6V



Junction Temperature ----------------------------------------------------------------------------------------------------- 150°C



Storage Temperature ------------------------------------------------------------------------------------------ -65℃ to 165℃



Operating Ambient Temperature Range (TA) -------------------------------------------------------------- -40℃ to 85°C



Maximum Soldering Temperature (at leads, 10sec) --------------------------------------------------------------- 260℃

Note 1.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Thermal Information



Maximum Power Dissipation (SOP8, PD,TA=25°C) ----------------------------------------------------------------- 1.5W



Thermal Resistance (SOP8, θJA) ------------------------------------------------------------------------------------- 80℃/W



Maximum Power Dissipation (ESOP8, PD,TA=25°C) ----------------------------------------------------------------- 2W



Thermal Resistance (ESOP8, θJA) ----------------------------------------------------------------------------------- 50℃/W

ESD Susceptibility



HBM(Human Body Mode) -------------------------------------------------------------------------------------------------- 2KV



MM(Machine Mode) --------------------------------------------------------------------------------------------------------- 200V

LP6482S Fiches technique(PDF) 4 Page - Lowpower Semiconductor inc

LP6482S Fiches technique(HTML) 4 Page - Lowpower Semiconductor inc

Html Pages

1 2 3 4 5 6 7 8 9 10

Fiches technique Télécharger

Lien URL