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IXTP05N100M Fiches technique(PDF) 4 Page - IXYS Corporation |
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IXTP05N100M Fiches technique(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() IXTP05N100M IXYS reserves the right to change limits, test conditions, and dimensions. Fig. 7. Transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 ID - Amperes TJ = - 40ºC 125ºC 25ºC Fig. 8. Forward Voltage Drop of Intrinsic Diode 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 9. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 01 234 56 78 QG - NanoCoulombs VDS = 500V I D = 1A I G = 1mA Fig. 10. Capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 11. Maximum Transient Thermal Impedance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: T_05N100M(1T)7-29-08 |
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