SIC769CD datasheet(4/18 Pages) VISHAY

4 / 18 page

www.vishay.com

Document Number: 64981

S11-0975-Rev. F, 16-May-11

Vishay Siliconix

SiC769

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note:

a. Typical MOSFET Parameters are provided as a design guide.

Note:

a. Min. and Max. are not 100 % production tested.

MOSFET SPECIFICATIONS

Parameter

Symbol

Test Conditions Unless Specified

VVCIN = VDSBL# = 5 V,

VVIN = 12 V, TA = 25 °C

Min.

Typ.a

Max.

Unit

High Side

VDS

VGS = 0, IDS = 250 µA

RDS(on)_H

VGH = 5 V, resistance measured

at package pins



Low Side

VDS

VGS = 0, IDS = 250 µA

RDS(on)_L

VGL = 5 V, resistance measured

at package pins

1.7



TIMING SPECIFICATIONS

Parameter

Symbol

Test Conditions Unless Specified

VVDRV = VVCIN = VDSBL# = 5 V,

VVIN = 12 V, TA = 25 °C

Min.

Typ.

Max.

Unit

Turn Off Propagation Delay

High Sidea

td_on_HS

25 % of PWM to 90 % of GH

Rise Time High Side

tr_HS

10 % to 90 % of GH

Fall Time High Side

tf_HS

90 % to 10 % of GH

Turn Off Propagation Delay

Low Sidea

td_off_LS

75 % of PWM to 90 % of GL

Rise Time Low Side

tr_LS

10 % to 90 % of GL

Fall Time Low Side

tf_LS

90 % to 10 % of GL

Dead Time Rising

tdead_on

10 % of GL to 10 % of GH

Dead Time Falling

tdead_off

10 % of GH to 10 % of GL

SIC769CD Fiches technique(PDF) 4 Page - Vishay Siliconix

SIC769CD Fiches technique(HTML) 4 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Fiches technique Télécharger

Lien URL