IXTH2N150 datasheet(1/4 Pages) IXYS

No de pièce	IXTH2N150

Description	N-Channel Enhancement Mode Fast Intrinsic Diode

PDF	4 Pages

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Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

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DS100653(3/15)

High Voltage

Power MOSFET

Features

 International Standard Package

 Fast Intrinsic Diode

 Molding Epoxies meet UL 94 V-0

Flammability Classification

Advantages

 Easy to Mount

 Space Savings

 High Power Density

Applications

 High Voltage Power Supplies

 Capacitor Discharge Applications

 Pulse Circuits

IXTH2N150

V

DSS

= 1500V

I

D25

=2A

R

DS(on) 

 9.2



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1500

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1500

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C2

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

6A

dv/dt

I

S

 I

DM, VDD  VDSS,TJ  150C

5

V/ns

P

D

T

C = 25C

170

W

T

J

- 55 ... +150

C

T

JM

150

C

T

stg

- 55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque

1.13 / 10

Nm/lb.in

Weight

6

g

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-247

G

S

Tab

D

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

1500

V

GS(th)

V

DS = VGS, ID = 250A

2.5

5.0

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

T

J = 125C

400

A

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

9.2



Advance Technical Information

N-Channel Enhancement Mode

Fast Intrinsic Diode

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