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RN4606 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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RN4606 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() RN4606 2001-02-08 2/4 Q1, Q2 Common Maximum Ratings (Ta = 25 °°°°C) Characteristic Symbol Rating Unit Collector power dissipation PC * 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C * Total rating Marking Equivalent Circuit (Top View) · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 000707EAA2 |
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