ACE5290B datasheet(3/10 Pages) ACE

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ACE5290B

20V Complementary Enhancement Mode Field Effect Transistor

VER 1.1

N-channel Electrical Characteristics TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

VDS = 20V, VGS = 0V

μA

Gate Threshold Voltage

VGS(TH)

VGS = VDS , IDS= 250μA

0.6

1.0

Gate Leakage Current

IGSS

VGS= ±12V , VDS=0V

±100

Drain-Source On-state Resistance

RDS(on)

VGS = 4.5V , ID= 3.5A

mΩ

VGS = 2.5V , ID= 2.5A

VGS = 1.8V , ID= 2A

110

Forward Trans Conductance

gFS

VDS= 5V , ID= 3A

Diode Forward Voltage

VSD

ISD= 1.7A , VGS= 0V

0.74

1.0

Maximum Body-Diode

Continuous Current

1.7

Switching

Total Gate Charge

VDS=4.5V, ID= 10A,

VGS= 4V

2.4

Gate-Source Charge

Qgs

0.3

Gate-Drain Charge

Qgd

0.8

Turn-on Delay Time

td( on )

VDD= 10V,ID= 1A,

VGS= 4.5V,RGEN= 6Ω

2.1

Turn-on Rise Time

3.6

Turn-off Delay Time

td( off )

23.3

Turn-off Fall Time

4.5

Dynamic

Input Capacitance

Ciss

VDS=8V,VGS= 0V,

f= 1.0MHz

240.3

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific

board design.

Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

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