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MA2SP01 Fiches technique(PDF) 1 Page - Panasonic Semiconductor |
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MA2SP01 Fiches technique(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Publication date: April 2002 SKL00010AED PIN diodes MA2SP01 Silicon epitaxial planar type For high frequency switch s Features • Low terminal capacitance: C t ≤ 0.8 pF • Low forward dynamic resistance: r f ≤ 1.0 Ω • Miniature package and surface mounting type s Absolute Maximum Ratings T a = 25°C Unit: mm Parameter Symbol Rating Unit Reverse voltage (DC) VR 60 V Forward current (DC) IF 100 mA Power dissipation PD 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Marking Symbol: 2P 1: Anode 2: Cathode SSMini2-F1 Package 0.80 +0.05 –0.03 0.60 +0.05 –0.03 0.12 +0.05 –0.02 0 +0 –0.05 0.30 ±0.05 0.01 ±0.01 1 2 5˚ Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 60 V 100 nA Forward voltage (DC) VF IF = 10 mA 1.0 V Terminal capacitance Ct VR = 1 V, f = 1 MHz 0.8 pF Forward dynamic resistance rf IF = 10 mA, f = 100 MHz 1.0 Ω s Electrical Characteristics T a = 25°C ± 3°C |
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