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PSM63-R10M revendeur |
| revendeur | No de pièce | Fabricant | Description | Price | Qty. BuyNow | |
![]() Chip-Germany GmbH | DHS104 DIP-SCHALTER 4P SMD | knitter-switch | 1,890 | |||
![]() Vyrian | PSMN4R0-25YLC,115![]() | Nexperia | Power Field-Effect Transistor, 84A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 13,604 | ||
| PSMN5R0-80PS | Nexperia | Power Field-Effect Transistor, 100A I(D), 80V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 13,025 | |||
| PSMN6R4-30MLD | Nexperia | Power Field-Effect Transistor RoHS : Compliant | 10,325 | |||
PSMN041-80YLX![]() | Nexperia | Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 9,992 | |||
| PSMN1R0-40YLD | Nexperia | Power Field-Effect Transistor RoHS : Compliant | 8,602 | |||
PSMN015-110P,127![]() | Nexperia | Power Field-Effect Transistor, 75A I(D), 110V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 8,478 | |||
| PSMN1R1-30EL | Nexperia | Power Field-Effect Transistor, 120A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 8,413 | |||
| PSMN1R6-30MLH/S500 | Nexperia | Power Field-Effect Transistor | 7,160 | |||
| PSMN7R5-30YLD | Nexperia | Power Field-Effect Transistor RoHS : Compliant | 6,650 | |||
PSMN4R5-40PS,127![]() | Nexperia | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 5,500 | |||
| PSMN0R9-30YLD-2X | Nexperia | 4,846 | ||||
| PSMN015-110P | Nexperia | Power Field-Effect Transistor, 75A I(D), 110V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 3,522 | |||
PSMN2R5-60PLQ![]() | Nexperia | Power Field-Effect Transistor, 150A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 3,165 | |||
| PSMN016-100YS | NXP Semiconductors | Power Field-Effect Transistor, 51A I(D), 100V, 0.0163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 RoHS : Compliant | 416 | |||
| PSMN2R7-30BL | NXP Semiconductors | Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 393 | |||
![]() Wuhan P&S | TPSMF4L14A | Littelfuse Inc | TVS Diodes RoHS : Compliant |
| 87,000 | |
| TPSMD33CA | Littelfuse Inc | 3000W TVS Diode RoHS : Compliant |
| 3,000 |
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