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H45FDD-R revendeur |
| revendeur | No de pièce | Fabricant | Description | Price | Qty. BuyNow | |
![]() ComSIT USA | SFH4542Z | OSRAM OPTO SEMICONDUCTOR | AVAILABLE EU | 94,827 | ||
| PLT10HH450180PNL | Murata Manufacturing Co Ltd | AVAILABLE EU RoHS : Compliant | 9,233 | |||
![]() GLYN GmbH & Co. KG | TB67H450AFNG(O,EL) | Toshiba America Electronic Components | 50V/3.5A brushed motor driver P-HSOP8 0405 1.27 0 RoHS : Compliant | 2,500 | ||
![]() NexGen Digital | DIN-48SH-457-1 | 3M | 50 | |||
![]() Powell Electronics | 86093968813H45V1LF | Amphenol FCi | Cable Assembly RoHS : Compliant |
| 421 | |
| 86093967113H45ELF | Amphenol FCi | Cable Assembly RoHS : Compliant |
| 84 | ||
| 1CH45-RB | Honeywell Sensing and Control | Switch |
| 3 | ||
![]() PUI | EKMH451VSN821MA80U | United Chemi-Con Inc | RoHS : Compliant | 200 | ||
| 4172-2X17H+4575-1X25HX15. | 5 | |||||
![]() Vyrian | LM12H458CIVX-NOPB | Texas Instruments | 22,300 | |||
| A3T23H450W23SR6 | NXP Semiconductors | RoHS : Compliant | 11,200 | |||
| A2T14H450-23NR6 | NXP Semiconductors | RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 5,350 | |||
| SFH4550-GW | OSRAM Opto Semiconductors | Infrared LED, 4.95mm, 1-Element, 860nm RoHS : Compliant | 4,600 | |||
| A3T18H455W23S | NXP Semiconductors | 3,400 | ||||
| MCP16301H-450E/CH | Microchip Technology Inc | Switching Regulator, Current-mode, 0.6A, 550kHz Switching Freq-Max, PDSO6 RoHS : Compliant | 2,700 | |||
| A2T18H450W19SR6 | NXP Semiconductors | RoHS : Compliant | 1,800 | |||
| A3T19H455W23SR6 | NXP Semiconductors | RoHS : Compliant | 1,700 | |||
| D1961SH45TXPSA1 | Infineon Technologies AG | Rectifier Diode, 1 Phase, 1 Element, 2380A, 4500V V(RRM), Silicon RoHS : Compliant | 1,400 | |||
| D1301SH45TXPSA1 | Infineon Technologies AG | Rectifier Diode, 1 Phase, 1 Element, 1740A, 4500V V(RRM), Silicon | 1,350 | |||
| DMNH45M7SCT | Diodes Incorporated | Power Field-Effect Transistor, 220A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,250 | |||
| A3T21H450W23SR6 | NXP Semiconductors | RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 810 | |||
| DS1000H-450 | Analog Devices Inc | 450 | ||||
| A2T21H450W19SR6 | NXP Semiconductors | RF Power Field-Effect Transistor RoHS : Compliant | 440 | |||
| XF3H-4555-31AR | OMRON Corporation | FFC/FPC Connector, 45 Contact(s), 2 Row(s), Straight, 0.012 inch Pitch, Surface Mount Terminal, Locking, Natural Insulator RoHS : Compliant | 52 |
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