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F2SP-4-R/ revendeur |
| revendeur | No de pièce | Fabricant | Description | Price | Qty. BuyNow | |
![]() Ameya Holding Limited | NXH800A100L4Q2F2S1G | onsemi | 820 | |||
| NXH800A100L4Q2F2S2G | onsemi | RoHS : Compliant | 820 | |||
![]() ComSIT USA | DF2S5M4CTL3FT | Toshiba America Electronic Components | ESD PROTECTION DIODE SILICON EPITAXIAL PLANAR Trans Voltage Suppressor Diode, 30W, 3.6V V(RWM), Unidirectional, 1 Element, Silicon RoHS : Compliant | 99,980 | ||
| LAE6SF2S112A2B+BW243A4BAR18XX | OSRAM GmbH | Single Color LED RoHS : Compliant | 16,000 | |||
| DF2S51ASLL3F | Toshiba America Electronic Components | Electronic Component RoHS : Compliant | 2,485 | |||
| TLP3052D4LF2SCF | Toshiba America Electronic Components | GAAS IRED & PHOTO-TRIAC PHOTOCOUPLER Triac Output Optocoupler, 1-Element, 5000V Isolation RoHS : Compliant | 550 | |||
| BE890F2S110T0I1000 | Telit | Cellular Module, 3G/4G LTE, SMT, for M2M and IoT wireless communication RoHS : Not Compliant | 94 | |||
| SLBEF2S | Amphenol Corporation | PROTECTION CAP Connector Accessory, Cap Item RoHS : Not Compliant | 25 | |||
![]() Richardson RFPD | DCMC392M500DF2S | Knowles CDE | Alum Electrolytc Cap RoHS : Compliant | 0 | ||
| NXH200T120H3Q2F2STNG | onsemi | Si/SiC Hybrid Module, Split T-Type NPC inverter So RoHS : Compliant | 0 | |||
| NXH200T120H3Q2F2SG | onsemi | Si SiC Hybrid Module, Split T Type NPC, IGBT 1200 RoHS : Compliant | 0 | |||
| NXH400N100L4Q2F2SG | onsemi | Trans IGBT Module N-CH 1000V 360A 980W Tray RoHS : Compliant | 0 | |||
![]() Braemac Americas-Symmetry | PCFL-180P-F2S | Nipron Co | 180W fanless ATX power supply |
| 1 | |
| BE890F2S110TMI1000 | Telit | BLE 4.2 FULL SENSORS / BLUEMOD+S42M/AI3ATH |
| 0 | ||
![]() EBV Elektronik | DF2S6.8FS,L3M(T | Toshiba America Electronic Components | ESD Suppressor Zener Single UniDir 30kV 2Pin SOD923 (Alt: DF2S6.8FS,L3M(T) RoHS : Compliant | 20,000 | ||
| DF2S5M4FS,L3M(T | Toshiba America Electronic Components | ESD Suppressor TVS Single UniDir 30kV 2Pin SOD923 (Alt: DF2S5M4FS,L3M(T) RoHS : Compliant | 20,000 | |||
| DF2S6.2FS,L3M(T | Toshiba America Electronic Components | ESD PROTECTION DIODE (Alt: DF2S6.2FS,L3M(T) RoHS : Compliant | 10,000 | |||
| IPD038N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 120 A 385 Milliohms TO252 DPAK 3 Pins Surface Mount (Alt: SP005588983) RoHS : Compliant | 4,000 | |||
| IPD040N08NF2SATMA1 | Infineon Technologies AG | Transistor MOSFET NChannel 80V 129A 3Pin TO252 TR (Alt: SP005737450) RoHS : Compliant | 4,000 | |||
| IPA030N10NF2SXKSA1 | Infineon Technologies AG | (Alt: SP005538815) RoHS : Compliant | 3,500 | |||
| IPD028N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 139 A 285 Milliohms TO252 DPAK 3 Pins Surface Mount (Alt: SP005588978) RoHS : Compliant | 2,000 | |||
| IPT017N10NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 100 V 294 A 00016 ohm HSOF Surface Mount (Alt: SP005612527) RoHS : Compliant | 1,800 | |||
| IPB016N08NF2SATMA1 | Infineon Technologies AG | Transistor MOSFET NCH 80V 260A 7Pin TO263 TR (Alt: SP005571685) RoHS : Compliant | 1,600 | |||
| IPF012N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 282 A 12 Milliohms TO263 7 Pins Surface Mount (Alt: SP005588970) RoHS : Compliant | 1,600 | |||
| IPF010N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 293 A 105 Milliohms TO263 7 Pins Surface Mount (Alt: SP005588966) RoHS : Compliant | 800 | |||
| NXH200T120H3Q2F2STNG | onsemi | IGBT Module Three level Inverter 330 A 12 kV 679 W 175 C Q2PACK (Alt: NXH200T120H3Q2F2STNG) RoHS : Compliant | 396 | |||
| NXH450B100H4Q2F2SG | onsemi | SiSiC Hybrid Modules 3 Channel Symmetric Boost 1000 V 150 A IGBT 1200 V 30 A SiC Diode Solder pins (Alt: NXH450B100H4Q2F2SG) RoHS : Compliant | 216 | |||
| NXH300B100H4Q2F2SG | onsemi | SiSiC Hybrid Modules 3 Channel flying capacitor Boost 1000 V 100 A IGBT 1200 V 30 A SiC Diode (Alt: NXH300B100H4Q2F2SG) RoHS : Compliant | 0 | |||
| IPP014N06NF2SAKMA2 | Infineon Technologies AG | Transistor Power MOSFET NCH 60V 198A 3Pin TO220 Tube (Alt: SP005742469) RoHS : Compliant | 0 | |||
![]() Flip Electronics | NGTD8R65F2SWK | onsemi | Stock, Ship Today RoHS : Compliant | 17,557 | ||
| NXH300B100H4Q2F2S1G | onsemi | Stock, Ship Today | 2,448 | |||
| CNY17F2SVM | onsemi | Stock, Ship Today RoHS : Compliant | 2,000 | |||
| CNY17F2SM | onsemi | Stock, Ship Today RoHS : Compliant | 995 | |||
| NXH400N100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 36 | |||
| NXH450N65L4Q2F2S1G-01 | onsemi | Stock, Ship Today | 36 | |||
| NXH400N100L4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 36 | |||
| NXH200B100H4F2SG | onsemi | Stock, Ship Today | 20 | |||
| NXH450B100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 12 | |||
![]() Maritex | WCM3225F2SF-601T10 | Tai-Tech Advanced Electronics Co Ltd | Common Choke SMD 600 Ohm @ 100Mhz; 1A; RoHS : Compliant |
| 2,353 | |
![]() Vyrian | RJF2SA1N | Amphenol Corporation | Rectangular Connector, 8 Contact(s), Female, Receptacle RoHS : Compliant | 17,404 | ||
| LDC15F-2-SN | Cosel USA Inc | AC-DC Regulated Power Supply Module, 3 Output, 19.5W, Hybrid RoHS : Compliant | 12,393 | |||
| NXH800A100L4Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor, 309A I(C), 1000V V(BR)CES, N-Channel | 12,357 | |||
| NXH450N65L4Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor, 167A I(C), 650V V(BR)CES, N-Channel RoHS : Compliant | 10,348 | |||
| NXH300B100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 73A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 10,098 | |||
| NGTD17T65F2SWK | onsemi | Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel RoHS : Compliant | 9,824 | |||
| NGTD20T120F2SWK | onsemi | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,295 | |||
| NXH450B100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 101A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 7,447 | |||
| NXH300B100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 73A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 6,967 | |||
| NXH400N100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 409A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 6,122 | |||
| NXH600B100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 5,533 | |||
| NXH600N65L4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 5,037 | |||
| NGTD17R120F2SWK | onsemi | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon RoHS : Compliant | 4,993 | |||
| NXH200B100H4F2SG | onsemi | 4,853 | ||||
| NXH400B100H4Q2F2SG | onsemi | RoHS : Compliant | 2,211 | |||
![]() Win Source Electronics | WCM2012F2SF-221T03 | Tai-Tech Advanced Electronics Co Ltd | 2 Line Common Mode Choke Surface Mount 220 Ohms @ 100 MHz 300mA DCR 400mOhm RoHS : Compliant |
| 428,000 | |
| DF2S6.8FS | Toshiba America Electronic Components | Product for Use Only as Protection against Electrostatic Discharge (ESD). RoHS : Compliant |
| 380,000 | ||
| DF2S6.8UFS | Toshiba America Electronic Components | ESD Protection Diodes Silicon Epitaxial Planar RoHS : Compliant |
| 150,000 | ||
| DF2S6.8UFS(TPL3) | Toshiba America Electronic Components | Diode 5V 2-Pin fSC T/R |
| 135,050 | ||
| IPP082N10NF2S | Infineon Technologies AG | N-Channel 100V 77A 100W Through Hole TO-220-3 RoHS : Compliant |
| 30,201 | ||
| IPP082N10NF2SAKMA1 | Infineon Technologies AG | TRENCH >=100V / N-Channel 100 V 15A (Ta), 77A (Tc) 3.8W (Ta), 100W (Tc) Through Hole PG-TO220-3 RoHS : Compliant |
| 28,370 | ||
| IPP050N10NF2SAKMA1 | Infineon Technologies AG | TRENCH >=100V / N-Channel 100 V 19.4A (Ta), 110A (Tc) 3.8W (Ta), 150W (Tc) Through Hole PG-TO220-3 RoHS : Compliant |
| 24,320 |
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