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3E63ZPX-R revendeur |
| revendeur | No de pièce | Fabricant | Description | Price | Qty. BuyNow | |
![]() Ameya Holding Limited | BCR133 E6327 | Infineon Technologies AG | 292 | |||
![]() ComSIT USA | BCR523E6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Compliant | 105,649 | ||
| BCR133E6327 | Infineon Technologies AG | NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Not Compliant | 36,415 | |||
BB833E6327![]() | Infineon Technologies AG | SILICON TUNING DIODE Variable Capacitance Diode, S Band, 9.3pF C(T), 35V, Silicon RoHS : Not Compliant | 31,112 | |||
| BCR503E6327 | Infineon Technologies AG | NPN SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Not Compliant | 15,205 | |||
| BCR183E6327 | Infineon Technologies AG | PNP SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon RoHS : Not Compliant | 10,015 | |||
BSS123E6327![]() | Infineon Technologies AG | SIPMOS SMALL-SIGNAL TRANSISTOR Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Not Compliant | 8,075 | |||
| BCR553E6327 | Infineon Technologies AG | PNP SILICON DIGITAL TRANSISTOR Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon RoHS : Compliant | 5,555 | |||
| BCR533E6327 | Siemens | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Not Compliant | 5,485 | |||
| BCP53E6327 | Infineon Technologies AG | PNP SILICON AF TRANSISTOR Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon RoHS : Not Compliant | 5,000 | |||
| SMBTA43E6327 | Siemens | NPN SILICON TRANSISTOR FOR HIGH VOLTAGES Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Not Compliant | 3,000 | |||
| BCR583E6327 | Infineon Technologies AG | NPN Bipolar Junction Transistor, 60V, 100mA, SOT-23 package RoHS : Compliant | 2,712 | |||
| BSS63E6327 | Siemens | PNP SILICON AF AND SWITCHING TRANSISTOR Small Signal Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon RoHS : Not Compliant | 2,695 | |||
| BFP193E6327 | Infineon Technologies AG | NPN SILICON RF TRANSISTOR RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS : Compliant | 2,210 | |||
| BFR193E6327 | Infineon Technologies AG | NPN SILICON RF TRANSISTOR RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS : Compliant | 1,885 | |||
| BSP373E6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Not Compliant | 600 | |||
![]() Interstate Connecting Components | CA-S36-43E-63 | Circuit Assembly | RoHS COMPLIANT |
| 8 | |
| CA-S10-43E-63 | Circuit Assembly |
| 1 | |||
| CA-S06-43E-63 | Circuit Assembly | ROHS COMPLIANT |
| 1 | ||
![]() Rutronik | BCR583E6327HTSA1 | Infineon Technologies AG | PNP DIGITALTRANS.10/10K SOT23 RoHS : Compliant |
| 9,000 | |
![]() Chip 1 Exchange | BBY53-E-6327 | INSTOCK | 43,010 | |||
| BCR133E6393 | INSTOCK | 30,000 | ||||
| BCR503E6327 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 23,206 | |||
| BCR503 E6327 | Infineon Technologies AG | INSTOCK | 19,730 | |||
| BCR133E6327HTSA1 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 6,288 | |||
| BCR183 E-6327 | Infineon Technologies AG | INSTOCK | 4,800 | |||
| BSS123E-6327 | INSTOCK | 3,720 | ||||
| BFR193-E6327 | INSTOCK | 3,052 | ||||
| BFP193E6327 | Siemens | INSTOCK | 2,995 | |||
| BCR183E6327 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 2,500 | |||
| BFT93-E-6327 | Siemens | INSTOCK | 2,476 | |||
| BCR133-E6327 | Infineon Technologies AG | INSTOCK | 2,123 | |||
| TLE4274DV33E6327 | Infineon Technologies AG | INSTOCK | 2,000 | |||
| BCR533E6327HTSA1TR-ND | Infineon Technologies AG | INSTOCK | 1,979 | |||
| BB833 E-6327 | Siemens | INSTOCK | 1,887 | |||
![]() Avnet Abacus | P0603E6341BNT | Vishay Intertechnologies | - Tape and Reel (Alt: P0603E6341BNT) RoHS : Compliant | 0 | ||
| P0603E6340BNT | Vishay Intertechnologies | - Tape and Reel (Alt: P0603E6340BNT) RoHS : Compliant | 0 | |||
| RV0603E6342BNT | Vishay Intertechnologies | SMD Chip Resistor 634 kOhm 01 125 mW 0603 1608 Metric Thin Film High Precision - Tape and Reel (Alt: RV0603E6342BNT) RoHS : Compliant | 0 | |||
![]() Master Electronics | S751/3-E63 | Thomas & Betts | Selective Main Circuit Breaker - 3P - Individual Switching - E Curve Tripping - 63A - 25kA RoHS : Compliant |
| 0 | |
![]() Vyrian | BCR133E6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon RoHS : Compliant | 13,222 | ||
| BCR189L3E6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon | 12,212 | |||
| BCR573E6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon RoHS : Compliant | 11,993 | |||
| BFS483-E6327 | Infineon Technologies AG | Transistor RoHS : Compliant | 11,724 | |||
| BCR119L3E6327 | Infineon Technologies AG | 9,941 | ||||
| BCR142L3E6327 | Infineon Technologies AG | 9,656 | ||||
| BCR153L3E6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon | 8,585 | |||
| BCR133L3E6327 | Infineon Technologies AG | 8,024 | ||||
| BGF113E6328XTSA1 | Infineon Technologies AG | Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon RoHS : Compliant | 7,794 | |||
| BCR139L3E6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon | 7,599 | |||
| BC857BL3E6327XTMA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon RoHS : Compliant | 6,989 | |||
| BCR151L3E6327 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon | 6,420 | |||
| BCR116L3E6327 | Infineon Technologies AG | 6,310 | ||||
| BCR183E6327HTSA1 | Infineon Technologies AG | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon RoHS : Compliant | 4,509 | |||
| BFR193E6327HTSA1 | Infineon Technologies AG | RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS : Compliant | 4,092 | |||
![]() Win Source Electronics | BCP53 E6393 | Infineon Technologies AG |
| 709,000 | ||
| BCP53 E6327 | Infineon Technologies AG | Trans GP BJT PNP 80V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R |
| 681,330 | ||
| BCR183 E6327 | Infineon Technologies AG |
| 69,000 | |||
| BCR183E6327HTSA1 | Infineon Technologies AG | TRANS PREBIAS PNP 0.2W SOT23-3 RoHS : Compliant |
| 65,130 | ||
| BFR193E6327 | Infineon Technologies AG | NPN Bipolar RF Transistor / Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin SOT-23 T/R RoHS : Compliant |
| 60,000 | ||
| BFR193E6327HTSA1 | Infineon Technologies AG | RF TRANS NPN 12V 8GHZ SOT23-3 / RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT23 RoHS : Compliant |
| 54,350 | ||
| BCR503E6327HTSA1 | Infineon Technologies AG | TRANS PREBIAS NPN 300MW SOT23-3 RoHS : Compliant |
| 51,900 | ||
| BCR503E6327 | Infineon Technologies AG | RoHS : Compliant |
| 51,146 | ||
| BCR133 E6327 | Infineon Technologies AG | TRANS 2NPN PREBIAS 0.25W SOT363 |
| 23,480 | ||
| BCR133E6327HTSA1 | Infineon Technologies AG | TRANS PREBIAS NPN 200MW SOT23-3 RoHS : Compliant |
| 21,670 | ||
| BFP193E6327HTSA1 | Infineon Technologies AG | RF TRANS NPN 12V 8GHZ SOT143-4 / RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT-143-3D RoHS : Compliant |
| 6,000 | ||
| BFP193E6327 | Infineon Technologies AG | Trans RF BJT NPN 12V 0.08A 580mW Automotive 4-Pin SOT-143 T/R RoHS : Compliant |
| 6,000 | ||
BB833E6327HTSA1![]() | Infineon Technologies AG | DIODE VARACTOR 30V SOD-323 RoHS : Compliant |
| 2,680 |
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