| Moteur de recherche de fiches techniques de composants électroniques |
|
1GE-R2 revendeur |
| revendeur | No de pièce | Fabricant | Description | Price | Qty. BuyNow | |
![]() Rutronik | S1G-E3/61T | Vishay Intertechnologies | DIODE 1A 400V SMA RoHS : Compliant |
| 257,400 | |
| GF1G-E3/5CA | Vishay Intertechnologies | SI-DIODE 1A 400V GF1 RoHS : Compliant |
| 247,000 | ||
| RS1G-E3/61T | Vishay Intertechnologies | ULTRAFAST_DIODE 1A 400V SMA RoHS : Compliant |
| 151,200 | ||
| DG4053EEN-T1-GE4 | Vishay Intertechnologies | 3xSPDT 4/8Channel miniQFN16 SMD RoHS : Compliant |
| 9,000 | ||
| S1G-E3/5AT | Vishay Intertechnologies | DIODE 1A 400V SMA RoHS : Compliant |
| 7,500 | ||
| SQS965ELNW-T1_GE3 | Vishay Intertechnologies | DUAL P-CH 60V 6A 7.7mOhm PPAK 1212x8 RoHS : Compliant |
| 6,000 | ||
| SIHH240N65E-T1-GE3 | Vishay Intertechnologies | N-CH 700V 14A 208mOhm PPAK 8x8 RoHS : Compliant |
| 6,000 | ||
| SIHR120N60E-T1-GE3 | Vishay Intertechnologies | N-CH 600V 32A 104mOhm PPAK 8x8LR RoHS : Compliant |
| 6,000 | ||
| SIHR120N60EF-T1GE3 | Vishay Intertechnologies | N-CH 600V 31A 110mOhm PPAK 8x8LR RoHS : Compliant |
| 6,000 | ||
| SIHK125N65E-T1-GE3 | Vishay Intertechnologies | N-CH 650V 25A 106mOhm PPAK 10x12 RoHS : Compliant |
| 4,000 | ||
| SIR418DP-T1-GE3 | Vishay Intertechnologies | N-CH 40V 40A 5mOhm PPAK SO-8 RoHS : Compliant |
| 3,000 | ||
| SQJ738EP-T1_GE3 | Vishay Intertechnologies | DUAL N-CH 40V 123A 3,17mOhm SO-8L RoHS : Compliant |
| 3,000 | ||
| SI1308EDL-T1-GE3 | Vishay Intertechnologies | N-CHANNEL-MOS-FET 1,4A 30V SC70 RoHS : Compliant |
| 3,000 | ||
| RGL41G-E3/96 | Vishay Intertechnologies | SI-DIODE 1A 400V MELF RoHS : Compliant |
| 1,500 | ||
| SIHH070N60EF-T1GE3 | Vishay Intertechnologies | N-CH 650V 36A 61mOhm PPAK8x8 RoHS : Compliant |
| 34 | ||
![]() Chip 1 Exchange | ERJ1GEJ682C | Panasonic Electronic Components | INSTOCK RoHS : Compliant | 195,000 | ||
| ERJ-1GEF1072C | Panasonic Electronic Components | INSTOCK | 59,686 | |||
| SQ2361AEES-T1_GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 53,500 | |||
| ERJ-1GEJ102C | Panasonic Electronic Components | INSTOCK | 44,605 | |||
| KLM8G1GEND-B031 | Samsung Electro-Mechanics | INSTOCK | 40,000 | |||
| SI7322DN-T1-GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 33,000 | |||
| US1G-E3/5AT | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 2,252 | |||
| ERJ1GEF7502C | Panasonic Electronic Components | INSTOCK RoHS : Compliant | 533 | |||
| ERJ1GEF4992C | Panasonic Electronic Components | INSTOCK RoHS : Compliant | 333 | |||
| ERJ-1GEF9763C | INSTOCK | 34 | ||||
| ERJ-1GEF2403C | INSTOCK | 32 | ||||
| ERJ-1GEF1000C | INSTOCK | 26 | ||||
| ERJ-1GEF5622C | Panasonic Electronic Components | INSTOCK | 16 | |||
| SI7322DN-T1-GE3 | INSTOCK | 15 | ||||
| W01G-E4/51 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 10 | |||
![]() Avnet Silica | TG1G-E001NYLF | Halo Electronics Inc | (Alt: TG1G-E001NYLF) RoHS : Compliant | 288 | ||
| PRISM1-ADPTR-NVDM1-GEVK | onsemi | PRISM MODULE TO RASPBERRY NVIDIA ADAPTER EVB KIT (Alt: PRISM1-ADPTR-NVDM1-GEVK) RoHS : Compliant | 6 | |||
| PRISM1-ADPTR-DM3D1-GEVB | onsemi | PRISM DEMO3 ADAPTER MIPI HiSPI BOARD (Alt: PRISM1-ADPTR-DM3D1-GEVB) RoHS : Compliant | 1 | |||
| TG1G-E234NVRL | Halo Electronics Inc | SMD ISOLATION MODULE (Alt: TG1G-E234NVRL) RoHS : Compliant | 0 | |||
| TG1G-E010NZLF | Halo Electronics Inc | (Alt: TG1G-E010NZLF) RoHS : Compliant | 0 | |||
| TG1G-E005J24LF | Halo Electronics Inc | Telecom Transformer 11 1500Vrms 13Ohm 11dB Surface Mount (Alt: TG1G-E005J24LF) RoHS : Compliant | 0 | |||
| TG1G-E201NV6LF | Halo Electronics Inc | HLOTG1GE201NV6LF (Alt: TG1G-E201NV6LF) RoHS : Compliant | 0 | |||
| TW8844AT-LB1-GE | Renesas Electronics Corporation | Video Proc 18V33V 156Pin LQFP TR (Alt: TW8844AT-LB1-GE) RoHS : Compliant | 0 | |||
| TW9992AT-NA1-GE | Renesas Electronics Corporation | (Alt: TW9992AT-NA1-GE) RoHS : Compliant | 0 | |||
| E7160SL-001GEVB | onsemi | (Alt: E7160SL-001GEVB) RoHS : Compliant | 0 | |||
| TG1G-E005J24LFTR | Halo Electronics Inc | SMD Single Port Gigabit or Dual Port 10100BASETX Isolation Modules (Alt: TG1G-E005J24LFTR) RoHS : Compliant | 0 | |||
| LRI2K-SBN18/1GEM | STMicroelectronics | (Alt: LRI2K-SBN18/1GEM) RoHS : Compliant | 0 | |||
| ADD5045-915-1-GEVK | onsemi | AX5045 UltraLow Power NarrowBand RF Transceiver 915MHz with Integrated 23dBm High Power Amplifier (Alt: ADD5045-915-1-GEVK) RoHS : Not Compliant | 0 | |||
| DVK-SFEU-API-1-GEVK | onsemi | AXSFEUAPI Sigfox SoC for UpLink and DownLink Development Kit (Alt: DVK-SFEU-API-1-GEVK) RoHS : Compliant | 0 | |||
| XCL210B241G-EVB-0001 | Torex Semiconductor LTD | XCL210B 50mA Inductor BuiltIn StepDown Micro DCDC Converter Evaluation Board (Alt: XCL210B241G-EVB-0001) RoHS : Compliant | 0 | |||
![]() Braemac Americas-Symmetry | SM681GED C8V | Silicon Motion Technology Corp | Solid State Drive (SSD) FLASH - NAND (TLC) 128GB NVMe BGA |
| 0 | |
| TMJG0801GENL | Taoglas Antenna Solutions | RJ45 ICM, 1G Base-T, 1x1, Short Body, Tab Down, 10 pin THT, T+CMC, Shielded EMI Finger, LED, Commercial grade |
| 0 | ||
| GD55LB01GEY2GY | GigaDevice Semiconductor (Beijing) Inc | NOR Flash |
| 0 | ||
| SM681GEF C8V | Silicon Motion Technology Corp | industrial-grade 512GB embedded solid-state drive |
| 0 | ||
| SM681GEG C8VPGZ73F | Silicon Motion Technology Corp | PCIE 1TB 3D FERRISSD, I-TEMP |
| 0 | ||
| SM681GED AGSS | Silicon Motion Technology Corp | PCIe 40GB 3D FerriSSD, I-temp, SLC mode |
| 0 | ||
| SM681GEE C8V | Silicon Motion Technology Corp | industrial-grade 256GB PCIe NVMe FerriSSD |
| 0 | ||
| SM681GEE AFS SQW75J | Silicon Motion Technology Corp | SM681GEE AFS SQW75J |
| 0 | ||
| GD55LT01GEY2GY | GigaDevice Semiconductor (Beijing) Inc | NOR Flash |
| 0 | ||
| SM681GEF C8VT | Silicon Motion Technology Corp | PCIe 512GB 3D FerriSSD, I-temp, TLC moe |
| 0 | ||
| SM681GEF AGST | Silicon Motion Technology Corp | PCIe 512GB 3D FerriSSD, I-temp, TLC mode |
| 0 | ||
| SM681GEG C8VPG | Silicon Motion Technology Corp | PCIe 3D FerriSSD, I-temp |
| 0 | ||
| SM681GEG C8V | Silicon Motion Technology Corp | FeriSSD PCIe Gen4 x2/4 NVMe 2.0 1TB |
| 0 | ||
| GD55B01GEYIGY | GigaDevice Semiconductor (Beijing) Inc | NOR Flash |
| 0 | ||
| SM631GEA-BA-M1223W | Silicon Motion Technology Corp | SM631GEA-BA-M1223W |
| 0 | ||
![]() Chip-Germany GmbH | KLM8G1GEUF-B04P | Samsung Electronics Co. Ltd | 10,000 | |||
| KLM8G1GETF-B041007 | Samsung Electronics Co. Ltd | 10,000 | ||||
| KLM8G1GETF-B041 | Samsung Electronics Co. Ltd | 10,000 | ||||
| KLM8G1GEUF-B04Q057 | Samsung Electronics Co. Ltd | 10,000 | ||||
| KLM8G1GETF-B04100X | Samsung Electronics Co. Ltd | 10,000 | ||||
| KLM8G1GEUF-B04Q063 | Samsung Electronics Co. Ltd | 10,000 | ||||
| KLM8G1GEUF-B04P057 | Samsung Electronics Co. Ltd | 10,000 | ||||
| KLM8G1GEUF-B04Q | Samsung Electronics Co. Ltd | 10,000 | ||||
| KLM8G1GETF-B041006 | Samsung Electronics Co. Ltd | 10,000 | ||||
| SMD AN SI2374DS-T1-GE3 SOT-23 | Vishay Intertechnologies | 3,060 | ||||
| SI7923DN-T1-GE3 | Toshiba America Electronic Components |
| 2,000 | |||
| KLM8G1GETF-B041 006 | SAM |
| 1,120 | |||
![]() DB Roberts | D5PA3538X16591GENA | Southco | D5PA3538X16591GENA | 0 | ||
| M3211GE | Heyco | LTCG PG9 GRAY 10-1.4MM W/3168 | 0 | |||
![]() FDH Electronics | SIR826DP-T1-GE3 | Vishay Dale | Other Products |
| 9 | |
![]() Flip Electronics | 2N7002-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 831,000 | ||
| SIC533CD-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 136,000 | |||
| A4931GETTR-T | Allegro MicroSystems LLC | Stock, Ship Today |
| 129,000 | ||
| SI1050X-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 81,000 | |||
| SI1016X-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 66,000 | |||
| SIC401BCD-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 47,000 | |||
| SI7322DN-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 15,000 | |||
| SIC621CD-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 11,000 | |||
| CY7C1061GE-10BVXI | Infineon Technologies AG | Stock, Ship Today RoHS : Compliant |
| 8,621 | ||
| SIC780CD-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 8,000 | |||
CY7C1061GE30-10ZSXIT![]() | Cypress Semiconductor | Stock RoHS : Compliant | 6,374 | |||
| SI7456DP-T1-GE3 | Vishay Intertechnologies | Stock, Ship Today RoHS : Compliant |
| 6,000 | ||
| CY7C1061GE30-10BV1XIT | Infineon Technologies AG | Stock RoHS : Compliant | 2,000 | |||
| CY7C1041GE30-10BVXI | Infineon Technologies AG | Stock, Ship Today RoHS : Compliant |
| 1,010 | ||
| SIC401ACD-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 1,000 | |||
![]() Maritex | SI2319DS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: P-MOSFET; unipolar; -30V; -5.6A; 0.046ohm; 2.5W; -55+150 st.C; SMD; SOT23 |
| 5,900 | |
| SI2308BDS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: N-MOSFET; unipolar; 60V; 4A; 0.075ohm; 1.66W; -55+150 deg.C; SMD; SOT23 |
| 5,872 | ||
| SQ2309ES-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: P-MOSFET; unipolar; -60V; -5.2A; 0.05ohm; 2W; -55+175 deg.C; SMD; SOT-23 |
| 5,068 | ||
| SI2399DS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: P-MOSFET; unipolar; -20V; -5A; 4.4ohm; 2.5W; -55+150 deg.C; SMD; SOT23 |
| 4,895 | ||
| SI2319CDS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: P-MOSFET; unipolar; -30V; -5.6A; 0.046ohm; 2.5W; -55+150 deg.C; SMD; SOT23 |
| 4,000 | ||
| SI2333DS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: P-MOSFET; unipolar; -20V; -5A; 0.061ohm; -55+150 deg.C; SMD; SOT23 |
| 2,900 | ||
| SI2305CDS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: P-MOSFET; unipolar; -20V; -5A; 0.035ohm; 2.5W; -55+150 deg.C; SMD; SOT23 |
| 2,755 | ||
| SI2303CDS-T1-GE3 | Vishay Intertechnologies | Transistor: P-MOSFET; unipolar; -30V; -2.7A; 0.19ohm; 2.3W; -55+150 deg.C; SMD; SOT23 RoHS : Compliant |
| 1,729 | ||
| SI2312CDS-T1-GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 20V; 6A; 0.0318ohm; 2.1W; -55+150 deg.C; SMD; SOT23 RoHS : Compliant |
| 364 | ||
| SI2319CDS-T1-GE3 | Vishay Intertechnologies | Transistor: P-MOSFET; unipolar; -40V; -4.4A; 0.077ohm; 2.5W; -55+150 deg.C; SMD; SOT23 RoHS : Compliant |
| 162 | ||
| SI2312BDS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: N-MOSFET; unipolar; 20V; 6A; 0.028ohm; 2.1W; -55+150 st.C; SMD; SOT23 |
| 100 | ||
| SI2312CDS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: N-MOSFET; unipolar; 20V; 6A; 0.028ohm; 2.1W; -55+150 st.C; SMD; SOT23 |
| 100 | ||
| SI2315BDS-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: P-MOSFET; unipolar; -30V; -5.6A; 0.046ohm; 2.5W; -55+150 st.C; SMD; SOT23 |
| 100 | ||
| SI4435BDY-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: P-MOSFET; unipolar; -30V; -9A; 0,018ohm; 4.2W; -55+-150 st.C; SMD; SO8 |
| 100 | ||
| SI1926DL-T1-GE3 | VBsemi Electronics Co Ltd | Transistor: 2xN-MOSFET; unipolar; 60V; 300mA; 2.5ohm; 0.35W; -55+150 st.C; SMD; SOT-363 |
| 75 | ||
![]() Relay Specialties | TL-X1R5C1-GE | OMRON Corporation | Proximity Sensor |
| 20 | |
![]() TE Connectivity | 35-524-231-GE-901 | TE Connectivity | Battery Disconnector 35-524-231-GE-901 Switch Main Contact Current Rating: 500 A Operating Voltage: 32 VDC Number of Poles: 2 Operating Handle Type: T-Handle Termination Thread Size: M12 500 A 32 VDC T-Handle | TE Connectivity RoHS : Compliant |
| 7 | |
| 35-524-231-GE-A2-900 | TE Connectivity | Battery Disconnect. 35-524-231-GE-A2-900 Switch Main Contact Current Rating: 500 A Operating Voltage: 32 VDC Number of Poles: 2 Operating Handle Type: T-Handle Termination Thread Size: M12 500 A 32 VDC T-Handle | TE Connectivity RoHS : Compliant |
| 7 | ||
![]() Venkel Ltd. | US1G-EVL | VENKEL LTD | Rectifier;DO-214AC;400V;1A RoHS : Not Compliant | 0 | ||
![]() Win Source Electronics | SI2318CDS-T1-GE3 | Vishay Huntington | MOSFET N-CH 40V 5.6A SOT-23 |
| 145,000 | |
| SQ2361ES-T1-GE3 | Vishay Huntington |
| 45,000 | |||
| SQ2361ES-T1_GE3 | Vishay Siliconix | MOSFET P-CH 60V 2.8A SSOT23 |
| 45,000 | ||
| SQJ960EP-T1_GE3 | Vishay Huntington | MOSFET 2N-CH 60V 8A / Mosfet Array 60V 8A 34W Surface Mount PowerPAK® SO-8 Dual |
| 39,311 | ||
| SQ2361AEES-T1_GE3 | Vishay Huntington | AUTOMOTIVE P-CHANNEL 60 V D-S 175 DEGREE C MOSFET | MOSFET P-CH 60V 2.5A SSOT23 |
| 39,000 | ||
| SQ4284EY-T1_GE3 | Vishay Huntington | MOSFET 2N-CH 40V 8A 8SOIC |
| 33,000 | ||
| SI1016X-T1-GE3 | Vishay Huntington | MOSFET N/P-CH 20V SC89-6 / Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R |
| 30,657 | ||
| SIC437BED-T1-GE3 | Vishay Huntington | MICROBUCK POWERSAVE |
| 30,057 | ||
| SI2365EDS-T1-GE3 | Vishay Huntington | MOSFET P-CH 20V 5.9A TO-236 |
| 30,000 | ||
| SI1050X-T1-GE3 | Vishay Huntington | MOSFET N-CH 8V 1.34A SC-89-6 |
| 21,000 | ||
| SI1058X-T1-GE3 | Vishay Huntington | MOSFET N-CH 20V SC89 |
| 14,021 | ||
| SI7322DN-T1-GE3 | Vishay Huntington | MOSFET N-CH 100V 18A 1212-8 / Trans MOSFET N-CH 100V 5.5A 8-Pin PowerPAK 1212 T/R |
| 9,000 | ||
| SQJA86EP-T1_GE3 | Vishay Huntington | MOSFET N-CH 80V 30A PPAK SO-8 / N-Channel 80 V 30A (Tc) 48W (Tc) Surface Mount PowerPAK? SO-8 |
| 9,000 | ||
| SI7615CDN-T1-GE3 | Vishay Huntington | MOSFET P-CH 20V 35A PPAK1212-8 |
| 6,197 | ||
| SIC530CD-T1-GE3 | Vishay Huntington | 30 A VRPower Integrated Power Stage |
| 5,600 |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved짤Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |