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No de pièce	TS9410VB

Description	Specification of High Power IR Emitting Diode Chip

Taille du fichier	89.65 Kbytes

Html View	1 2 3 4

Fabricant	VISHAY [Vishay Siliconix]

Site Internet	http://www.vishay.com

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Numéro de pièce similaire - TS9410VB

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TS9410VB	90Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18
	TS9410VB-SD-F	90Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18
	TS9410VB	89Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18
	TS9410VB	90Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	TS8520VA	95Kb / 4P	Specification of High Power IR Emitting Diode Chip 20-Feb-12
	TS8542VA	101Kb / 4P	Specification of High Power IR Emitting Diode Chip 20-Feb-12
	TS8514VB	90Kb / 4P	Specification of High Power IR Emitting Diode Chip 11-Apr-17
	TS9414VB	91Kb / 4P	Specification of High Power IR Emitting Diode Chip 11-Apr-17
	TS8510VB	87Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18
	TS8510VB	88Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18
	TS9410VB	89Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18
	TS8510VB	89Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18
	TS8514VB	87Kb / 4P	Specification of High Power IR Emitting Diode Chip 02-Mar-2020
	TS9410VB	90Kb / 4P	Specification of High Power IR Emitting Diode Chip 06-Feb-18