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No de pièce	2SB955

Description	High DC Current Gain- : hFE = 1000(Min)@ IC= -5A

Taille du fichier	101.18 Kbytes

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Numéro de pièce similaire - 2SB955

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	2SB955	35Kb / 6P	Silicon PNP Triple Diffused
Renesas Technology Corp	2SB955	150Kb / 7P	Silicon PNP Triple Diffused
New Jersey Semi-Conduct...	2SB955	131Kb / 2P	Silicon PNP Darlington Power Transistor
Hitachi Semiconductor	2SB955K	35Kb / 6P	Silicon PNP Triple Diffused
Renesas Technology Corp	2SB955K	150Kb / 7P	Silicon PNP Triple Diffused

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	TIP105	262Kb / 6P	PNP (HIGH DC CURRENT GAIN MIN
MAKO SEMICONDUCTOR CO.,...	2SC1623	107Kb / 2P	High DC current gain hFE 200(Typ)VCE 6V, IC 1mA
Inchange Semiconductor ...	2SB1531	101Kb / 2P	High DC Current Gain- : hFE= 5000(Min)@IC= -5A
	2SB881	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -3.5A
	2SB882	102Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -5A
	2SB883	84Kb / 2P	High DC Current Gain- : hFE = 2000(Min)@ IC= -7A
	2SB897	93Kb / 2P	High DC Current Gain- : hFE = 1000(Min)@ IC= -10A
	2N4908	104Kb / 2P	DC Current Gain-: hFE= 20-80 @IC= -4A
	2N4907	104Kb / 2P	DC Current Gain-: hFE= 20-80 @IC= -4A
SHIKUES Electronics	BC846	1,020Kb / 4P	High current gain, Excellent hFE Linearity