IRG4BC20K pdf, IRG4BC20K Description, IRG4BC20K Fiches technique, IRG4BC20K view ::: ALLDATASHEET :::

No de pièce	IRG4BC20K

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)

Taille du fichier	138.37 Kbytes

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Fabricant	IRF [International Rectifier]

Site Internet	http://www.irf.com

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Numéro de pièce similaire - IRG4BC20K

Fabricant	No de pièce	Fiches technique	Description
International Rectifier	IRG4BC20K-S	162Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20K-SPBF	298Kb / 9P	Short Circuit Rated UltraFast IGBT
	IRG4BC20KD	199Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20KD-S	222Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
Inchange Semiconductor ...	IRG4BC20KD-S	402Kb / 3P	IGBT

Fabricant	No de pièce	Fiches technique	Description
International Rectifier	IRG4BC20F	161Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
	IRG4BC20KD	199Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20KDS	222Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20KS	162Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRGBC20F	249Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
	IRGPC20F	252Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)