RJK0856DPB_15 pdf, RJK0856DPB_15 Description, RJK0856DPB_15 Fiches technique, RJK0856DPB

No de pièce	RJK0856DPB

Description	80V, 35A, 8.9m??max. Silicon N Channel Power MOS FET Power Switching

Taille du fichier	154.28 Kbytes

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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Numéro de pièce similaire - RJK0856DPB_15

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJK0856DPB	153Kb / 7P	80V, 35A, 8.9m max. Silicon N Channel Power MOS FET Power Switching Apr 11, 2013

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJK0451DPB	108Kb / 7P	40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
	RJK0652DPB	108Kb / 7P	60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
	RJK0655DPB	158Kb / 7P	60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
	RJK0851DPB	108Kb / 7P	80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
	RJK0852DPB	108Kb / 7P	80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
	RJK0655DPB	158Kb / 7P	60V, 35A, 6.7m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0451DPB	108Kb / 7P	40V, 35A, 7.0m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0652DPB	108Kb / 7P	60V, 35A, 7.0m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0853DPB	108Kb / 7P	80V, 40A, 8.0m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0856DPB	153Kb / 7P	80V, 35A, 8.9m max. Silicon N Channel Power MOS FET Power Switching Apr 11, 2013