RMQCBA3636DGBA_15 pdf, RMQCBA3636DGBA_15 Description, RMQCBA3636DGBA_15 Fiches technique, RMQCBA3636DGBA

No de pièce	RMQCBA3636DGBA

Description	36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency)

Taille du fichier	849.61 Kbytes

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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Numéro de pièce similaire - RMQCBA3636DGBA_15

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RMQC4A1818DGBA	855Kb / 30P	18-Mbit DDR™ II SRAM 2-word Burst Jan. 13, 2015
	RMQC4A1818DGBA-302#AC0	855Kb / 30P	18-Mbit DDR??II SRAM 2-word Burst
	RMQC4A1818DGBA-332#AC0	855Kb / 30P	18-Mbit DDR??II SRAM 2-word Burst
	RMQC4A1836DGBA	855Kb / 30P	18-Mbit DDR™ II SRAM 2-word Burst Jan. 13, 2015
	RMQC4A1836DGBA-302#AC0	855Kb / 30P	18-Mbit DDR??II SRAM 2-word Burst

Fabricant	No de pièce	Fiches technique	Description
Cypress Semiconductor	CY7C1166V18	1Mb / 27P	18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1246V18	1Mb / 27P	36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
	CY7C1266V18	1Mb / 27P	36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1566V18	1Mb / 27P	72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1566KV18	921Kb / 31P	72-Mbit DDR II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
	CY7C1246KV18	913Kb / 28P	36-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
	CY7C1268KV18	871Kb / 28P	36-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency)
Renesas Technology Corp	RMQCEA3636DGBA	887Kb / 31P	36-Mbit DDR??II SRAM 2-word Burst Architecture (2.5 Cycle Read latency) with ODT
Renesas Technology Corp	RMQCHA3636DGBA	846Kb / 30P	36-Mbit DDR??II SRAM 2-word Burst Architecture (2.0 Cycle Read latency)
Cypress Semiconductor	CY7C12661KV18	903Kb / 30P	36-Mbit DDR II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)