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No de pièce	NE552R479A

Description	3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

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Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

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Numéro de pièce similaire - NE552R479A

Fabricant	No de pièce	Fiches technique	Description
California Eastern Labs	NE552R479A	495Kb / 9P	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET 08/11/2003
Renesas Technology Corp	NE552R479A	291Kb / 11P	SILICON POWER MOS FET 2003
	NE552R479A-T1	291Kb / 11P	SILICON POWER MOS FET 2003
	NE552R479A-T1A	291Kb / 11P	SILICON POWER MOS FET 2003
California Eastern Labs	NE552R479A-T1A-A	495Kb / 9P	NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET 08/11/2003

Fabricant	No de pièce	Fiches technique	Description
NEC	5510279A	390Kb / 4P	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE5510179A	39Kb / 4P	3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
	NE5510279A	39Kb / 5P	3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE552R679A	68Kb / 9P	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
California Eastern Labs	NE5500179A	43Kb / 5P	4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS
	NE5510179A	42Kb / 4P	3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
	NE5510279A	42Kb / 5P	3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
	NE5531079A	382Kb / 8P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
Renesas Technology Corp	NE5531079A	240Kb / 11P	7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
STMicroelectronics	RF5L08350CB4	1Mb / 12P	400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 28-Sep-2021