RC2012F510CS pdf, RC2012F510CS Description, RC2012F510CS Fiches technique, RC2012F510CS view ::: ALLDATASHEET :::

No de pièce	RC2012F510CS

Description	Owing to the reduced lead inductance, the high frequency characteristic is excellent.

Taille du fichier	791.37 Kbytes

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Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

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Numéro de pièce similaire - RC2012F510CS

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Fabricant	No de pièce	Fiches technique	Description
ice Components, Ins.	IN08034	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08035	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08052	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08070	56Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08106	37Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08124	35Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08127	37Kb / 2P	Isat is the current at which the inductance drops by 15%.
	IN08137	36Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN08144	35Kb / 2P	Isat is the current at which the inductance drops by 20%.
	IN09004	36Kb / 2P	Isat is the current at which the inductance drops by 15%.