RJK0655DPB pdf, RJK0655DPB Description, RJK0655DPB Fiches technique, RJK0655DPB view ::: ALLDATASHEET :::

No de pièce	RJK0655DPB

Description	60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching

Taille du fichier	158.73 Kbytes

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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Numéro de pièce similaire - RJK0655DPB

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJK0655DPB	158Kb / 7P	60V, 35A, 6.7m??max. Silicon N Channel Power MOS FET Power Switching

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJK0451DPB	108Kb / 7P	40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
	RJK0652DPB	108Kb / 7P	60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
	RJK0653DPB	108Kb / 7P	60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching
	RJK0856DPB	154Kb / 7P	80V, 35A, 8.9m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0655DPB	158Kb / 7P	60V, 35A, 6.7m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0656DPB	157Kb / 7P	60V, 40A, 5.6m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0451DPB	108Kb / 7P	40V, 35A, 7.0m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0651DPB	107Kb / 7P	60V, 25A, 14m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0652DPB	108Kb / 7P	60V, 35A, 7.0m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0856DPB	153Kb / 7P	80V, 35A, 8.9m max. Silicon N Channel Power MOS FET Power Switching Apr 11, 2013