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No de pièce	RJK0236DPA

Description	Built in SBD N Channel Power MOS FET High Speed Power Switching

Taille du fichier	161.1 Kbytes

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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Numéro de pièce similaire - RJK0236DPA

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJK0230DPA	221Kb / 11P	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
Renesas Technology Corp	RJK0234DNS	288Kb / 7P	25V, 35A, 5.8m廓max. N Channel Power MOS FET High Speed Power Switching

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJK03A4DPA	127Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK0204DPA	125Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK0206DPA	125Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK0208DPA	125Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK0213DPA	197Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK0379DPA	126Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK03C5DPA	126Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK03E4DPA	142Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK03E5DPA	141Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching
	RJK03E6DPA	141Kb / 7P	Built in SBD N Channel Power MOS FET High Speed Power Switching