IPB021N06N3G pdf, IPB021N06N3G Description, IPB021N06N3G Fiches technique, IPB021N06N3G view ::: ALLDATASHEET :::

No de pièce	IPB021N06N3G

Description	OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec.

Taille du fichier	483.71 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

Logo

Numéro de pièce similaire - IPB021N06N3G

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	IPB021N10NM5LF2	742Kb / 12P	MOSFET OptiMOS™ 5 Linear FET 2, 100 V Revision 1.0 2025-01-24

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	IPP100N08N3G	501Kb / 11P	OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. Rev. 2.2 2010-01-21
	IPB029N06N3G	483Kb / 11P	OptiMOS?? Power-Transistor Features Ideal for high frequency switching and sync. rec. Rev. 2.2 2009-12-11
	IPA057N06N3G	551Kb / 9P	Ideal for high frequency switching and sync. rec. 2010-05-03 revision:2.0
	IPA083N10N5	1Mb / 11P	Ideal for high frequency switching and sync. rec Rev.2.0,2014-12-18
	IPP023N08N5	1Mb / 12P	Ideal for high frequency switching and sync. rec Rev.2.0,2014-12-17
	IPP030N10N5	1Mb / 12P	Ideal for high frequency switching and sync. rec Rev.2.1,2015-01-30
	IPP034N08N5	1Mb / 12P	Ideal for high frequency switching and sync. rec Rev.2.0,2014-12-17
	BSZ075N08NS5	1Mb / 12P	Ideal for high frequency switching and sync. rec. Rev.2.1,2014-05-05
	BSZ110N08NS5	1Mb / 12P	Ideal for high frequency switching and sync. rec Rev.2.1,2014-05-05
	IPB017N08N5	1Mb / 12P	Ideal for high frequency switching and sync. rec. Rev.2.1,2014-05-05