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No de pièce	RJK03C1DPB

Description	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Taille du fichier	268.92 Kbytes

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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Numéro de pièce similaire - RJK03C1DPB

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	RJK03C1DPB	277Kb / 9P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Fabricant	No de pièce	Fiches technique	Description
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	RJK03C5DPA	86Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
	RJK0206DPA	85Kb / 7P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
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	RJK03C1DPB	277Kb / 9P	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching