BUF16821 pdf, BUF16821 Description, BUF16821 Fiches technique, BUF16821 view ::: ALLDATASHEET :::

No de pièce	BUF16821

Description	Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory

Taille du fichier	826.78 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Fabricant	EPCOS [EPCOS]

Site Internet	http://www.epcos.com

Logo

Numéro de pièce similaire - BUF16821

Fabricant	No de pièce	Fiches technique	Description
Texas Instruments	BUF16821	826Kb / 29P	Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory
	BUF16821	813Kb / 30P	Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory
	BUF16821	1Mb / 31P	Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory
	BUF16821	1Mb / 35P	Programmable Gamma-Voltage Generator and High Slew Rate VCOM
	BUF16821	1Mb / 38P	Programmable Gamma-Voltage Generator

Fabricant	No de pièce	Fiches technique	Description
Burr-Brown (TI)	BUF20800	752Kb / 27P	18-Channel GAMMA VOLTAGE GENERATOR with Two Programmable VCOM Channels
Texas Instruments	BUF22821	751Kb / 25P	Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory
	BUF16821	826Kb / 29P	Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory
	BUF16821	813Kb / 30P	Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory
	BUF08821	778Kb / 27P	Programmable Gamma-Voltage Generator and VCOM Calibrator with Integrated Two-Bank Memory
	BUF08832	800Kb / 30P	Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory
	BUF20800-Q1	1Mb / 32P	18-CHANNEL GAMMA VOLTAGE GENERATOR WITH TWO PROGRAMMABLE VCOM CHANNELS
	BUF12840	395Kb / 26P	Programmable Gamma-Voltage Generator with Integrated Two-Bank Memory and External EEPROM
	BUF08832	1Mb / 31P	Programmable Gamma-Voltage Generator and High Slew Rate VCOM with Integrated Two-Bank Memory
	BUF12840	1Mb / 32P	Programmable Gamma-Voltage Generator with Integrated Two-Bank Memory and External EEPROM