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No de pièce	BF966

Description	N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode

Taille du fichier	396.69 Kbytes

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Fabricant	TFUNK [Vishay Telefunken]

Site Internet	http://www.vishay.com

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Numéro de pièce similaire - BF966

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BF966	268Kb / 3P	SILICON N-CHANNEL DUAL GATE MOS-FET JULY 1987
Vishay Siliconix	BF966SA	161Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 15-Apr-05
Vishay Siliconix	BF966SB	161Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 15-Apr-05

Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	BF988	139Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 08-Jul-99
	BF994S	119Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 20-Jan-99
	BF995	116Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 20-Jan-99
	BF998	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 23-Jun-99
	BF961	160Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 25-Nov-04
TEMIC Semiconductors	BF996S	68Kb / 5P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
Vishay Siliconix	BF998	318Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 05-Sep-08
	BF988	157Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 11-Sep-08
	BF966SA	161Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 15-Apr-05