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Numéro de pièce similaire - CGHV14800F1

Fabricant	No de pièce	Fiches technique	Description
Cree, Inc	CGHV14800F	765Kb / 9P	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Rev 0.2
Cree, Inc	CGHV14800F-AMP	765Kb / 9P	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Rev 0.2

Fabricant	No de pièce	Fiches technique	Description
TriQuint Semiconductor	T1G6001528-Q3	487Kb / 15P	DC ??6 GHz 18 W GaN RF Power Transistor
	T1G6001528-Q3	487Kb / 15P	DC 6 GHz 18 W GaN RF Power Transistor
	TQP0102	374Kb / 10P	5 W, DC to 4 GHz, GaN Power Transistor
	TQP0103	486Kb / 10P	15 W, DC to 4 GHz, GaN Power Transistor
	TQP0104	384Kb / 12P	30 W, DC to 4 GHz, GaN Power Transistor
Qorvo, Inc	QPD1028L	1Mb / 16P	750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor Oct 2021
	QPD1028	1Mb / 16P	750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor November 2021
	T2G6003028-FL	2Mb / 21P	30 W, 28V DC – 6 GHz, GaN RF Power Transistor May 2021
WOLFSPEED, INC.	GTVA107001EC_FC	638Kb / 8P	High Power RF GaN on SiC HEMT 700 W, 50 V, DC - 1.4 GHz Rev. 3.1, 2021-10-14
WOLFSPEED, INC.	GTVA126001EC_FC	443Kb / 8P	Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Rev. P06, 2020-03-10