| Fabricant | No de pièce | Fiches technique | Description |
 Hamamatsu Corporation |
P13243
|
225Kb / 4P |
InAsSb photovoltaic detectors
|
|
P10090
|
212Kb / 6P |
InAs photovoltaic detectors
|
 VIGO Photonics S.A. |
PEM
|
737Kb / 2P |
2.0 – 12.0 μm HgCdTe ambient temperature photoelectromagnetic detectors
09/11/2020 |
|
PVA-2TE
|
695Kb / 2P |
2.4 – 5.3 μm InAs and InAsSb two-stage thermoelectrically cooled photovoltaic detectors
04/05/2022 |
|
PVI
|
700Kb / 2P |
2.5 – 6.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detectors
25/09/2020 |
|
PV-SERIES
|
696Kb / 2P |
2.5 – 6.5 μm HgCdTe ambient temperature photovoltaic detectors
17/11/2020 |
|
PVIA-2TE
|
697Kb / 2P |
2.4 – 5.3 μm InAs and InAsSb two-stage thermoelectrically cooled, optically immersed photovoltaic detectors
24/06/2022 |
|
PVIA
|
645Kb / 2P |
2.4 – 5.3 μm InAs and InAsSb ambient temperature, optically immersed photovoltaic detectors
04/05/2022 |
|
PVM
|
695Kb / 2P |
2.0 – 13.0 μm HgCdTe ambient temperature photovoltaic multiple junction detectors
09/11/2020 |
|
PVMI
|
699Kb / 2P |
2 – 12 μm HgCdTe ambient temperature, optically immersed photovoltaic multiple junction detectors
25/09/2020 |