IRF530 pdf, IRF530 Description, IRF530 Fiches technique, IRF530 view ::: ALLDATASHEET :::

No de pièce	IRF530

Description	TO-220-3L Plastic-Encapsulate MOSFETS

Taille du fichier	579.14 Kbytes

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Fabricant	DGNJDZ [Nanjing International Group Co]

Site Internet	http://www.dgnjdz.com/

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Numéro de pièce similaire - IRF530

Fabricant	No de pièce	Fiches technique	Description
Motorola, Inc	IRF530	157Kb / 2P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
STMicroelectronics	IRF530	47Kb / 3P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Jun-1988
Transys Electronics	IRF530	481Kb / 5P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE
Samsung semiconductor	IRF530	354Kb / 6P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF530	180Kb / 6P	N-Channel Power MOSFETs, 20 A, 60-100 V

Fabricant	No de pièce	Fiches technique	Description
Nanjing International G...	TIP127	1Mb / 2P	TO-220-3L Plastic-Encapsulate Transistors
Jiangsu Changjiang Elec...	2SB507	361Kb / 2P	TO-220-3L Plastic-Encapsulate Transistors
	2SB861	1Mb / 3P	TO-220-3L Plastic-Encapsulate Transistors
	2SB1185	549Kb / 2P	TO-220-3L Plastic-Encapsulate Transistors
	2SD2137	624Kb / 2P	TO-220 -3L Plastic-Encapsulate Transistors
	2SD2137A	570Kb / 2P	TO-220-3L Plastic-Encapsulate Transistors
	2SA1012	3Mb / 3P	TO-220-3L Plastic-Encapsulate Transistors
	TIP42	1Mb / 3P	TO-220-3L Plastic-Encapsulate Transistors
Nanjing International G...	IRF540	2Mb / 7P	TO-220-3L Plastic-Encapsulate MOSFETS
Nanjing International G...	TIP147	1Mb / 4P	TO-220-3L Plastic-Encapsulate Transistors