HVB350BYP pdf, HVB350BYP Description, HVB350BYP Fiches technique, HVB350BYP view ::: ALLDATASHEET :::

No de pièce	HVB350BYP

Description	Silicon Epitaxial Planar Variable Capacitance Diode for VCO

Taille du fichier	147.37 Kbytes

Html View	1 2 3 4 5

Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

Logo

Numéro de pièce similaire - HVB350BYP

Fabricant	No de pièce	Fiches technique	Description
Anshan Suly Electronics	HVB35-1	298Kb / 3P	HVB Series High Voltage Rectifier Diodes
Anshan Suly Electronics	HVB35-2	298Kb / 3P	HVB Series High Voltage Rectifier Diodes

Fabricant	No de pièce	Fiches technique	Description
KEC(Korea Electronics)	KDV239	72Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
	KDV239E	70Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
	KDV240	386Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
	KDV240E	383Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)
	KDV245E	383Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO)
	KDV257E	63Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
	KDV273E	63Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
	KDV350	67Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
	KDV350E	65Kb / 2P	VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
Toshiba Semiconductor	1SV257	285Kb / 2P	Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio