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No de pièce	LP4433T1G

Description	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology

Taille du fichier	567.06 Kbytes

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Fabricant	LRC [Leshan Radio Company]

Site Internet	http://www.lrc.cn/

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Numéro de pièce similaire - LP4433T1G

Fabricant	No de pièce	Fiches technique	Description
Leshan Radio Company	LP4435T1G	591Kb / 5P	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
Leshan Radio Company	LP4437T1G	495Kb / 5P	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology

Fabricant	No de pièce	Fiches technique	Description
Leshan Radio Company	LN7308DT1WG	373Kb / 3P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LNA7350DT1WG	1Mb / 5P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LNB8308DT0AG	472Kb / 6P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LP7337DT1WG	959Kb / 7P	P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LPB8337DT0AG	626Kb / 6P	P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LN3432LT1G	875Kb / 5P	N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LP4407T1G	441Kb / 5P	P-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
	LP4435T1G	591Kb / 5P	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
	LP4437T1G	495Kb / 5P	P-Channel 30-V (D-S) MOSFET Low rDS(on) trench technology
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