IXUN280N10 pdf, IXUN280N10 Description, IXUN280N10 Fiches technique, IXUN280N10 view ::: ALLDATASHEET :::

No de pièce	IXUN280N10

Description	Trench Power MOSFET Very low RDS(on)

Taille du fichier	117.65 Kbytes

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Fabricant	IXYS [IXYS Corporation]

Site Internet	http://www.ixys.com

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Numéro de pièce similaire - IXUN280N10

Fabricant	No de pièce	Fiches technique	Description
IXYS Corporation	IXUC100N055	575Kb / 2P	Electrically Isolated Back Surface
	IXUC120N10	56Kb / 2P	Trench Power MOSFET ISOPLUS220
	IXUC160N075	55Kb / 2P	Trench Power MOSFET
Inchange Semiconductor ...	IXUC160N075	306Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXUC200N055	53Kb / 2P	Trench Power MOSFET ISOPLUS220

Fabricant	No de pièce	Fiches technique	Description
Bruckewell Technology L...	MS15C37	809Kb / 8P	Low rDS(on) trench technology
	MS23N18	459Kb / 6P	Low rDS(on) trench technology
	MS23N70	446Kb / 6P	Low rDS(on) trench technology
	MS44N60T	559Kb / 6P	Low rDS(on) trench technology
	MS45C41	963Kb / 8P	Low rDS(on) trench technology
	MS48P35	517Kb / 6P	Low rDS(on) trench technology
	MSB90N10	467Kb / 6P	Low rDS(on) trench technology
	MSE20N06N	448Kb / 3P	Low RDS(on) trench technology
Sanken electric	EKG1020	800Kb / 8P	100V, 20A Low RDS(ON)N ch Trench Power MOSFET
Sanken electric	FKG1020	800Kb / 8P	100V, 20A Low RDS(ON) N ch Trench Power MOSFET