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No de pièce	GT15M321

Description	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

Taille du fichier	269.01 Kbytes

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Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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Numéro de pièce similaire - GT15M321

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	GT15M321	426Kb / 6P	HIGH POWER SWITCHING APPLICATIONS
	GT15M321	1Mb / 73P	Bipolar Small-Signal Transistors
	GT15M321	426Kb / 6P	HIGH POWER SWITCHING APPLICATIONS

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	GT30J121	294Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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	GT50G321	287Kb / 6P	TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
	GT50J325	170Kb / 7P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT8G132	338Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT15Q311	172Kb / 7P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT40G121	151Kb / 5P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60M322	191Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT60M323	193Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	GT80J101B	69Kb / 6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT