NE32000 pdf, NE32000 Description, NE32000 Fiches technique, NE32000 view ::: ALLDATASHEET :::

No de pièce	NE32000

Description	LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET

Taille du fichier	247.42 Kbytes

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Fabricant	NEC [NEC]

Site Internet	http://www.nec.com/

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Numéro de pièce similaire - NE32000

Fabricant	No de pièce	Fiches technique	Description
NEC	NE321000	48Kb / 12P	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
California Eastern Labs	NE321000	135Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
California Eastern Labs	NE321000	141Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
Renesas Technology Corp	NE321000	215Kb / 14P	HETERO JUNCTION FIELDEFFECT TRANSISTOR 1999
California Eastern Labs	NE321000	135Kb / 6P	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

Fabricant	No de pièce	Fiches technique	Description
NEC	NE202	329Kb / 9P	ULTRA LOW NOISE K BAND HETERO JUNCTION FET
TriQuint Semiconductor	TGA4506	124Kb / 9P	K Band Low Noise Amplifier
TriQuint Semiconductor	TGA4506-SM	117Kb / 10P	K Band Packaged Low Noise Amplifier
California Eastern Labs	NE3514S02	269Kb / 8P	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE350184C	269Kb / 8P	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3517S03	208Kb / 11P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
California Eastern Labs	NE3517S03	310Kb / 8P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
Renesas Technology Corp	NE3514S02	202Kb / 11P	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3517S03	208Kb / 11P	K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
TriQuint Semiconductor	TGA4506	663Kb / 10P	K Band Low Noise Amplifier