■ General Description
The XP162A01B5PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOT-89 package makes high density mounting possible.

◆ P-Channel Power MOS FET
◆ DMOS Structure
◆ Low On-State Resistance: 0.25Ω (max)
◆ Ultra High-Speed Switching
◆ SOT-89 Package

■ Features
    Low on-state resistance: Rds(on)=0.25Ω(Vgs=-4.5V)
                                          : Rds(on)=0.4Ω(Vgs=-2.5V)
    Ultra high-speed switching
    Operational Voltage : -2.5V
    High density mounting : SOT-89

■ Applications
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems