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TLP750 Fiches technique (PDF) - Toshiba Semiconductor

TLP750 Datasheet PDF - Toshiba Semiconductor
No de pièce TLP750
Télécharger  TLP750 Télécharger
Taille du fichier   191.57 Kbytes
Page   7 Pages
Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description TOSHIBA Photocoupler GaA?밃s Ired Photo IC

TLP750 Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
TLP750 Datasheet PDF - Toshiba Semiconductor

No de pièce TLP750
Télécharger  TLP750 Click to download

Taille du fichier   191.57 Kbytes
Page   7 Pages
Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description TOSHIBA Photocoupler GaA?밃s Ired Photo IC

TLP750 Fiches technique (HTML) - Toshiba Semiconductor


TLP750 Détails du produit

Digital Logic Ground Isolation

Line Receiver

Microprocessor System Interfaces

Switching Power Supply Feedback Control

Analog Signal Isolation



The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8−lead DIP.

TLP750 has no internal base connection, and is suitable for application in noisy environmental conditions.



• Switching speed: tpHL=0.3μs(typ.)

• Switching speed: tpLH=0.5μs(typ.)(RL=1.9kΩ)

• UL recognized: UL1577, file No. E67349

• BSI approved: BS EN60065: 2002,

                     Certificate No.8869

                     BS EN60950-1: 2002,

                     Certificate No.8870

• Isolation voltage: 5000Vrms(min.)

• Option(d4)type

   VDE approved: DIN EN 60747-5-2, Certificate No. 40009302

   Maximum operating insulation voltage: 890VPK

   Highest permissible over voltage: 8000VPK

• Creepage distance: 6.4mm(min.)

  Clearance: 6.4mm(min.)

  Insulation thickness: 0.4mm(min.)




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