K6F8016U6 Fiches technique(PDF) - Samsung semiconductor

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K6F8016U6 Fiches technique (PDF) - Samsung semiconductor

K6F8016U6 Datasheet PDF - Samsung semiconductor


No de pièce	K6F8016U6

Télécharger	K6F8016U6 Télécharger

Taille du fichier	157.37 Kbytes

Page	9 Pages

Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

Logo

Description

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6 Datasheet (PDF)

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Télécharger Fiches technique

K6F8016U6 Datasheet PDF - Samsung semiconductor


No de pièce	K6F8016U6

Télécharger	K6F8016U6 Click to download

Taille du fichier	157.37 Kbytes

Page	9 Pages

Fabricant	SAMSUNG [Samsung semiconductor]

Site Internet	http://www.samsung.com/Products/Semiconductor

Logo

Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6 Fiches technique (HTML) - Samsung semiconductor

K6F8016U6 Datasheet HTML 1Page - Samsung semiconductor

K6F8016U6 Datasheet HTML 2Page - Samsung semiconductor

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K6F8016U6 Datasheet HTML 4Page - Samsung semiconductor

K6F8016U6 Datasheet HTML 5Page - Samsung semiconductor

K6F8016U6 Datasheet HTML 6Page - Samsung semiconductor

K6F8016U6 Datasheet HTML 7Page - Samsung semiconductor

K6F8016U6 Datasheet HTML 8Page - Samsung semiconductor

K6F8016U6 Datasheet HTML 9Page - Samsung semiconductor

K6F8016U6 Détails du produit

GENERAL DESCRIPTION
The K6F8016U6B families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.

FEATURES
• Process Technology: Full CMOS
• Organization: 512K x16
• Power Supply Voltage: 2.7~3.3V
• Low Data Retention Voltage: 1.5V(Min)
• Three State Outputs
• Package Type: 48-TBGA-6.00x7.00

Numéro de pièce similaire - K6F8016U6

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	K6F8016U6D	154Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016U6D-FF55	154Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016U6D-FF70	154Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016U6D-XF55	154Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016U6D-XF70	154Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Description similaire - K6F8016U6

Fabricant	No de pièce	Fiches technique	Description
Samsung semiconductor	DS_K6F8016U6C	173Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016R6B	157Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016T6C	173Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016R6D	154Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016V3A	146Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
	K6F8016U6D	154Kb / 9P	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
List of Unclassifed Man...	EM681FV16AU	153Kb / 11P	512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
Emerging Memory & Logic...	EM681FV16AU	153Kb / 11P	512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
	EM681FU16	73Kb / 11P	512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
	EM680FU16	76Kb / 11P	512K x16 bit Low Power and Low Voltage Full CMOS Static RAM

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