2SA1365 Fiches technique(PDF) - Isahaya Electronics Corporation

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2SA1365 Fiches technique (PDF) - Isahaya Electronics Corporation

2SA1365 Datasheet PDF - Isahaya Electronics Corporation


No de pièce	2SA1365

Télécharger	2SA1365 Télécharger

Taille du fichier	125.48 Kbytes

Page	3 Pages

Fabricant	ISAHAYA [Isahaya Electronics Corporation]

Site Internet	http://www.idc-com.co.jp

Logo

Description

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

2SA1365 Datasheet (PDF)

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Télécharger Fiches technique

2SA1365 Datasheet PDF - Isahaya Electronics Corporation


No de pièce	2SA1365

Télécharger	2SA1365 Click to download

Taille du fichier	125.48 Kbytes

Page	3 Pages

Fabricant	ISAHAYA [Isahaya Electronics Corporation]

Site Internet	http://www.idc-com.co.jp

Logo

Description	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

2SA1365 Fiches technique (HTML) - Isahaya Electronics Corporation

2SA1365 Datasheet HTML 1Page - Isahaya Electronics Corporation

2SA1365 Datasheet HTML 2Page - Isahaya Electronics Corporation

2SA1365 Datasheet HTML 3Page - Isahaya Electronics Corporation

2SA1365 Détails du produit

DESCRIPTION
2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce(sat).
Complementary with 2SC3440.

FEATURE
● Low collector to emitter saturation voltage. VCE(sat)=-0.2V typ
● Excellent linearity of DC forward current gain.
● Super mini package for easy mounting.
● High collector current ICM=-1A
● High gain band width product fT=180MHz typ

APPLICATION
Small type motor drive, relay drive, power supply.

Numéro de pièce similaire - 2SA1365

Fabricant	No de pièce	Fiches technique	Description
Guangdong Kexin Industr...	2SA1365	38Kb / 1P	Silicon PNP Epitaxia
Isahaya Electronics Cor...	2SA1365	193Kb / 3P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
Foshan Blue Rocket Elec...	2SA1365	818Kb / 6P	Silicon PNP transistor in a SOT-23 Plastic Package
Isahaya Electronics Cor...	2SA1365	193Kb / 3P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
Guangdong Kexin Industr...	2SA1365	846Kb / 2P	PNP Transistors

Description similaire - 2SA1365

Fabricant	No de pièce	Fiches technique	Description
Isahaya Electronics Cor...	2SA1945	120Kb / 3P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	2SA1946	123Kb / 3P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	2SA1363	148Kb / 4P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	2SA2167	131Kb / 3P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	2SA2166	148Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	2SA1365	193Kb / 3P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	INA5005AC1	115Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	INA5006AC1	115Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	INA6001AC1	115Kb / 2P	FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
	ISA2166AM1	123Kb / 4P	FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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