| Fabricant | No de pièce | Fiches technique | Description |
 Hitachi Semiconductor |
HM5164805F
|
490Kb / 35P |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
 Samsung semiconductor |
M466F0804DT1-L
|
463Kb / 20P |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
|
 Integrated Silicon Solu... |
IS42S83200A
|
917Kb / 49P |
256 Mb Synchronous DRAM
|
 Elpida Memory |
HM5164805F
|
230Kb / 34P |
64 M EDO DRAM (8-Mword 횞 8-bit) 8 k Refresh/4 k Refresh
|
 Infineon Technologies A... |
S27KL0642
|
1Mb / 58P |
64-Mb HYPERRAM??self-refresh DRAM (PSRAM)
002-24692 Rev. *H |
|
S70KL1282
|
1Mb / 57P |
128Mb HYPERRAM??self-refresh DRAM(PSRAM)
002-29416 Rev. *B |
|
S80KS2562
|
1Mb / 54P |
256 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with HYPERBUS??interface 1.8 V
002-31337 Rev. *C |
|
S80KS2563
|
877Kb / 53P |
256 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V
002-31339 Rev. *C |
|
S80KS5122
|
1,002Kb / 53P |
512 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with HYPERBUS??interface 1.8 V
002-31338 Rev. *B |
|
S80KS5123
|
827Kb / 54P |
512 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with Octal xSPI interface
002-31340 Rev. *C |